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TPH4R50ANH,L1Q - Toshiba

Description: MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET

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TPH4R50ANH,L1Q - Toshiba PCB footprint - Other - Other - SOP8
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TPH4R50ANH,L1Q - Toshiba  - 3D model - Other - SOP8
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TPH4R50ANH,L1Q Details

  • Manufacturer Part Number:

    TPH4R50ANH,L1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    274 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH4R50ANH,L1Q Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal relief pattern and a minimum of 2 oz copper thickness to ensure optimal thermal performance. A heat sink or thermal pad can also be used to improve heat dissipation.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, use a stable voltage source and decoupling capacitors to minimize noise and ensure reliable operation.
  • Toshiba recommends soldering the device using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30-60 seconds. Avoid using wave soldering or hand soldering, as it may damage the device.
  • To prevent electrostatic discharge (ESD) damage, handle the device in an ESD-controlled environment, use ESD-protective packaging, and follow proper grounding procedures during assembly and testing.
  • The TPH4R50ANH,L1Q meets Toshiba's quality and reliability standards, which include compliance with industry standards such as AEC-Q101 and ISO/TS 16949. The device is also backed by Toshiba's warranty and support.

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