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TPH4R50ANH - Toshiba

Description: N-ch MOSFET, 100 V, 0.0045 Ω@10V, SOP Advance, U-MOSⅧ-H

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TPH4R50ANH - Toshiba  - 3D model
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TPH4R50ANH Details

  • Manufacturer Part Number:

    TPH4R50ANH

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    274 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH4R50ANH Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • Although not explicitly stated in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the rated voltage to prevent damage or malfunction.
  • While the TPH4R50ANH is not specifically designed for high-humidity environments, it can still be used with proper precautions. Ensure the device is properly sealed, and consider using conformal coating or potting to protect against moisture.
  • Toshiba recommends storing the TPH4R50ANH in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. Avoid storing the device in direct sunlight or near heat sources.

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