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TPH4R606NH - Toshiba

Description: N-ch MOSFET, 60 V, 0.0046 Ω@10V, SOP Advance, U-MOSⅧ-H

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TPH4R606NH Details

  • Manufacturer Part Number:

    TPH4R606NH

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    133 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH4R606NH Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a heat sink.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. Toshiba also recommends derating the device's power dissipation according to the ambient temperature.
  • The maximum allowable voltage stress on the TPH4R606NH is 1.5 times the rated voltage (Vr) for a maximum duration of 100ms. Exceeding this limit may cause permanent damage to the device.
  • To protect the TPH4R606NH from ESD, handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static package, and avoid touching the device's pins or leads during handling.
  • Toshiba recommends a soldering profile with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. The device should be soldered using a solder with a melting point of 217°C (423°F) or higher.

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TPH4R606NH Overview

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