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TPH8R008NH,L1Q - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR SOP-8-ADV MOQ=3000 PD=61W F=1MHZ

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TPH8R008NH,L1Q - Toshiba PCB footprint - Other - Other - SOP-8-ADV
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TPH8R008NH,L1Q - Toshiba  - 3D model - Other - SOP-8-ADV
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TPH8R008NH,L1Q Details

  • Manufacturer Part Number:

    TPH8R008NH,L1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    94 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    61 W

  • Pulsed Drain Current-Max (IDM):

    147 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPH8R008NH,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power handling of the device, and to ensure good airflow around the device. Additionally, the device should be mounted on a heat sink or a metal core PCB to help dissipate heat.
  • To prevent ESD damage, it is recommended to handle the device in an ESD-controlled environment, and to use ESD-protective packaging and handling materials. Additionally, personnel handling the device should wear ESD-protective wrist straps or clothing.
  • The optimal gate resistor value depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it is recommended to consult the application note or to perform simulations to determine the optimal value for the specific application.
  • Exceeding the maximum junction temperature can lead to a reduction in the device's lifespan, and can cause the device to fail prematurely. It can also lead to a decrease in the device's performance and reliability.

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