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TPN4R712MD,L1Q - Toshiba

Description: MOSFET P-Channel Mosfet 20V UMOS-VI

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TPN4R712MD,L1Q - Toshiba PCB footprint - Other - Other - TSONAdvance
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TPN4R712MD,L1Q - Toshiba  - 3D model - Other - TSONAdvance
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TPN4R712MD,L1Q Details

  • Manufacturer Part Number:

    TPN4R712MD,L1Q

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    640 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN4R712MD,L1Q Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the top and bottom layers connected to the thermal pad, and to use thermal vias to dissipate heat. Additionally, keeping the thermal pad away from other components and using a thermal interface material can improve heat dissipation.
  • To ensure proper soldering, use a soldering iron with a temperature of 250-270°C, and apply a small amount of solder paste to the pads. Use a soldering technique that minimizes the time the iron is in contact with the device. Avoid applying excessive force or pressure, which can damage the device.
  • Handle the device by the body, avoiding touching the pins or leads. Store the device in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the leads, and do not stack devices on top of each other.
  • The input capacitance value depends on the specific application and operating frequency. A general guideline is to use a capacitance value between 10nF to 100nF. However, it's recommended to consult the application note or contact Toshiba support for specific guidance.
  • The TPN4R712MD,L1Q meets the reliability and quality standards of Toshiba, including AEC-Q101 and ISO/TS 16949. The device is also RoHS and REACH compliant.

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TPN4R712MD,L1Q Overview

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