TPN4R Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 MOSFET P-Channel Mosfet 20V UMOS-VI Other TPN4R712MD,L1Q 1 Download Model
Part Image Part Image 1 MOSFET U-MOSVIII-H 30V 63A 6.8nC MOSFET Other TPN4R303NL,L1Q 1 Download Model
Part Image Part Image 1 MOSFET Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=104W F=1MHZ Other TPN4R806PL,L1Q 1 Download Model
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TPN4R203NC,L1Q Toshiba America Electronic Components
1 Power Field-Effect Transistor TPN4R203NC,L1Q 0 Build or Request
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TPN4R303NL Toshiba
1 N-ch MOSFET, 30 V, 0.0043 Ω@10V, TSON Advance, U-MOSⅧ-H TPN4R303NL 1 Download Model
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TPN4R303NL(TE12L) Toshiba America Electronic Components
1 Power Field-Effect Transistor, 45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET TPN4R303NL(TE12L) 0 Build or Request
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TPN4R203NC,L1Q(M Toshiba America Electronic Components
1 Power Field-Effect Transistor, 23A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TPN4R203NC,L1Q(M 0 Build or Request
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TPN4R203NC(TE12L) Toshiba America Electronic Components
1 Power Field-Effect Transistor, 53A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET TPN4R203NC(TE12L) 0 Build or Request
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TPN4R303NL,L1Q(M Toshiba America Electronic Components
1 Power Field-Effect Transistor, 40A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TPN4R303NL,L1Q(M 0 Build or Request
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TPN4R303NL(TE12L1) Toshiba America Electronic Components
1 Power Field-Effect Transistor, 45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET TPN4R303NL(TE12L1) 0 Build or Request
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TPN4R203NC Toshiba
1 N-ch MOSFET, 30 V, 0.0042 Ω@10V, TSON Advance, U-MOSⅧ TPN4R203NC 1 Download Model
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TPN4R806PL,L1Q(M Toshiba America Electronic Components
1 Power Field-Effect Transistor, 105A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TPN4R806PL,L1Q(M 0 Build or Request
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TPN4R203NC(TE12L1) Toshiba America Electronic Components
1 Power Field-Effect Transistor, 53A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET TPN4R203NC(TE12L1) 0 Build or Request
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TPN4R712MD Toshiba
1 P-ch MOSFET, -20 V, 0.0047 Ω@4.5V, TSON Advance, U-MOSⅥ TPN4R712MD 1 Download Model
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TPN4R806PL Toshiba
1 N-ch MOSFET, 60 V, 0.0048 Ω@10V, TSON Advance, U-MOSⅨ-H TPN4R806PL 1 Download Model
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KNP-50FT-PN4R22 YAGEO Corporation
1 Fixed Resistor, Wire Wound, 0.5W, 4.22ohm, 1% +/-Tol, KNP-50FT-PN4R22 0 Build or Request
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MFR1WSFT-PN4R32 YAGEO Corporation
1 Fixed Resistor, Metal Film, 1W, 4.32ohm, 400V, 1% +/-Tol, MFR1WSFT-PN4R32 0 Build or Request
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KNP2WSFT-PN4R42 YAGEO Corporation
1 Fixed Resistor, Wire Wound, 2W, 4.42ohm, 1% +/-Tol, KNP2WSFT-PN4R42 0 Build or Request
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MFN-50DT-PN4R64 YAGEO Corporation
1 Fixed Resistor, Metal Film, 0.5W, 4.64ohm, 350V, 0.5% +/-Tol, MFN-50DT-PN4R64 0 Build or Request
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MFR-50DT-PN4R32 YAGEO Corporation
1 Fixed Resistor, Metal Film, 0.5W, 4.32ohm, 350V, 0.5% +/-Tol, MFR-50DT-PN4R32 0 Build or Request
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PNP100FT-PN4R75 YAGEO Corporation
1 Fixed Resistor, Wire Wound, 1W, 4.75ohm, 300V, 1% +/-Tol, PNP100FT-PN4R75 0 Build or Request
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MFN-50FT-PN4R12 YAGEO Corporation
1 Fixed Resistor, Metal Film, 0.5W, 4.12ohm, 350V, 1% +/-Tol, MFN-50FT-PN4R12 0 Build or Request
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NKN1WSJT-PN4R7 YAGEO Corporation
1 Fixed Resistor, Wire Wound, 1W, 4.7ohm, 5% +/-Tol, NKN1WSJT-PN4R7 0 Build or Request
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FRM-25JT-PN4R3 YAGEO Corporation
1 Fixed Resistor, Metal Film, 0.25W, 4.3ohm, 200V, 5% +/-Tol, FRM-25JT-PN4R3 0 Build or Request
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CFR-25JT-PN4R7 YAGEO Corporation
1 Fixed Resistor, Carbon Film, 0.25W, 4.7ohm, 250V, 5% +/-Tol, -350,500ppm/Cel, CFR-25JT-PN4R7 0 Build or Request
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