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TPN4R806PL,L1Q - Toshiba

Description: MOSFET Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=104W F=1MHZ

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TPN4R806PL,L1Q - Toshiba PCB footprint - Other - Other - TPN4R806PL,L1Q-8
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TPN4R806PL,L1Q - Toshiba  - 3D model - Other - TPN4R806PL,L1Q-8
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TPN4R806PL,L1Q Details

  • Manufacturer Part Number:

    TPN4R806PL,L1Q

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    28 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    105 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN4R806PL,L1Q Frequently Asked Questions (FAQs)

  • The recommended land pattern for the TPN4R806PL,L1Q can be found in the Toshiba datasheet or in the IPC-7351 standard. It is essential to follow the recommended land pattern to ensure reliable soldering and to prevent thermal and mechanical stress.
  • The TPN4R806PL,L1Q has a high power dissipation, so it's crucial to implement proper thermal management. This can be achieved by using a heat sink, thermal interface material, and ensuring good airflow around the device. The thermal resistance of the device should be considered when designing the thermal management system.
  • The maximum operating temperature range for the TPN4R806PL,L1Q is -40°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme temperatures for an extended period.
  • The TPN4R806PL,L1Q is not hermetically sealed, so it's not recommended for use in high-humidity environments. Moisture can penetrate the package and cause reliability issues. If operation in a humid environment is necessary, consider using a conformal coating or potting the device.
  • The ESD rating of the TPN4R806PL,L1Q is typically 2 kV human body model (HBM) and 200 V machine model (MM). However, it's essential to follow proper ESD handling procedures to prevent damage during handling and assembly.

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TPN4R806PL,L1Q Overview

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