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TPN7R506NH,L1Q - Toshiba

Description: MOSFET

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TPN7R506NH,L1Q - Toshiba PCB footprint - Other - Other - TPN7R506NH,L1Q-4
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TPN7R506NH,L1Q - Toshiba  - 3D model - Other - TPN7R506NH,L1Q-4
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TPN7R506NH,L1Q Details

  • Manufacturer Part Number:

    TPN7R506NH,L1Q

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    105 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    53 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    58 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    135 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TPN7R506NH,L1Q Frequently Asked Questions (FAQs)

  • The recommended land pattern for the TPN7R506NH,L1Q is a rectangle with a length of 2.5mm and a width of 1.5mm, with a thermal pad in the center.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating curves provided in the datasheet, and to ensure that the device is operated within the recommended temperature range of -40°C to 150°C.
  • The maximum allowed voltage for the TPN7R506NH,L1Q is 50V, as specified in the datasheet.
  • The TPN7R506NH,L1Q should be stored in a dry, cool place, away from direct sunlight and moisture. During shipping, the devices should be packaged in anti-static bags or tubes to prevent damage from electrostatic discharge.
  • The recommended soldering temperature profile for the TPN7R506NH,L1Q is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a ramp-up rate of 3°C/second.

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TPN7R506NH,L1Q Overview

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