TW083Z65C - Toshiba
Description: N-ch SiC MOSFET, 650 V, 0.083 Ω(typ.)@18V, TO-247-4L(X), 3rd Gen.
Description: N-ch SiC MOSFET, 650 V, 0.083 Ω(typ.)@18V, TO-247-4L(X), 3rd Gen.
TW083Z65C
Yes
Active
TO-247-4L(X), 4 PIN
EAR99
Toshiba America Electronic Components
6
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
30 A