TW083 Model Download Search Results
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TW083N65C
Toshiba
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1 | N-ch SiC MOSFET, 650 V, 0.083 Ω(typ.)@18V, TO-247, 3rd Gen. | Other | TW083N65C |
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TW083N65C
Toshiba Electronic Devices & Storage Corporation
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | TW083N65C |
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TW083Z65C
Toshiba Electronic Devices & Storage Corporation
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.118ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | TW083Z65C |
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TW083N65C,S1F(S
Toshiba America Electronic Components
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | TW083N65C,S1F(S |
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![Part Image](["https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/TO-247.png","https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/design-development/package-detail/Pkg_img/TO-247.png",null])
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