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UF3N120007K4S - onsemi

Description: Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 7.1 mohm, 1200V, -55°C to 175°C

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PCB Footprints
UF3N120007K4S - onsemi PCB footprint - Other - Other - TO-247-4L_2025-6
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3D Models
UF3N120007K4S - onsemi  - 3D model - Other - TO-247-4L_2025-6
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UF3N120007K4S Details

  • Manufacturer Part Number:

    UF3N120007K4S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    358 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    789 W

  • Pulsed Drain Current-Max (IDM):

    550 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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UF3N120007K4S Overview

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