UF3N1 Model Download Search Results
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UF3N120007K4S
onsemi
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1 | Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 7.1 mohm, 1200V, -55°C to 175°C | Other | UF3N120007K4S |
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UF3N170400B7S
onsemi
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1 | Operating temperature: 175?C (max); Extremely fast switching not dependent on temperature; Low gate charge and intrinsic capacitance; RoHS compliant | Other | UF3N170400B7S |
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UF3N10L-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 3A I(D), 100V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | UF3N10L-TN3-R |
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UF3N10G-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 3A I(D), 100V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | UF3N10G-TN3-R |
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UF3N170400B7S
Qorvo
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1 | Power Field-Effect Transistor, 6.8A I(D), 1700V, 0.5ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET | UF3N170400B7S |
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![Part Image](["https://www.mouser.com/images/qorvo/images/UF3N120007K4S_SPL.jpg",null,null])
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