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UF4SC120009K4SH - onsemi

Description: Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 9.1 mohm

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PCB Footprints
UF4SC120009K4SH - onsemi PCB footprint - Other - Other - TO-247-4L_2025-12
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3D Models
UF4SC120009K4SH - onsemi  - 3D model - Other - TO-247-4L_2025-12
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UF4SC120009K4SH Details

  • Manufacturer Part Number:

    UF4SC120009K4SH

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO247-4LH, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    317 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0106 Ω

  • FET Technology:

    JUNCTION CASCODE

  • Feedback Cap-Max (Crss):

    0.2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Pulsed Drain Current-Max (IDM):

    550 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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UF4SC120009K4SH Overview

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