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UMB11NFHATN - ROHM Semiconductor

Description: PNP+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive

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PCB Footprints
UMB11NFHATN - ROHM Semiconductor PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - UMT6
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3D Models
UMB11NFHATN - ROHM Semiconductor  - 3D model - SOT23 (6-Pin) - UMT6
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UMB11NFHATN Details

  • Manufacturer Part Number:

    UMB11NFHATN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-88, 6 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-03-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

UMB11NFHATN Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the UMB11NFHATN is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Typically, a voltage regulator or a voltage divider network is used to provide a stable voltage supply to the device. Additionally, ensure that the input and output pins are properly terminated to prevent signal reflections and oscillations.
  • The maximum power dissipation of the UMB11NFHATN is typically specified in the datasheet as a function of the operating temperature. To calculate the power dissipation, use the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Ensure that the calculated power dissipation does not exceed the maximum rating to prevent overheating and device damage.
  • To protect the UMB11NFHATN from ESD, follow proper handling and storage procedures. Use anti-static wrist straps, mats, or bags to prevent static electricity buildup. Ensure that the device is properly grounded during assembly and testing. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design to absorb any potential ESD events.
  • To ensure optimal performance and minimize noise, follow these PCB layout and design considerations: keep the input and output traces short and separate, use a solid ground plane, and avoid routing critical signals near the device's pins. Additionally, consider using a 4-layer PCB with a dedicated power plane and a separate ground plane to reduce noise and improve signal integrity.

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UMB11NFHATN Overview

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