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UMH10NFHATN - ROHM Semiconductor

Description: NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive

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PCB Footprints
UMH10NFHATN - ROHM Semiconductor PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363_
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3D Models
UMH10NFHATN - ROHM Semiconductor  - 3D model - SOT23 (6-Pin) - SOT-363_
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UMH10NFHATN Details

  • Manufacturer Part Number:

    UMH10NFHATN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-88, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 21

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

UMH10NFHATN Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias connecting to a solid ground plane to ensure efficient heat dissipation. A thermal relief pattern around the pad is also recommended to prevent thermal stress.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for voltage and current. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowed voltage for the gate-source (Vgs) and gate-drain (Vgd) pins is ±20V, with a maximum transient voltage of ±30V for a duration of less than 100ns.
  • To prevent latch-up, ensure that the device is operated within the recommended voltage and current ranges. Avoid applying high voltage or current spikes to the device, and use a suitable gate resistor to limit the gate current.
  • The recommended gate resistor value is typically in the range of 1kΩ to 10kΩ, depending on the specific application and switching frequency. A higher gate resistor value can help reduce EMI and ringing, but may increase the turn-on time.

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