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UMH1NFHATN - ROHM Semiconductor

Description: NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor) for automotive

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UMH1NFHATN - ROHM Semiconductor  - 3D model
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UMH1NFHATN Details

  • Manufacturer Part Number:

    UMH1NFHATN

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-88, 6 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    56

  • JESD-30 Code:

    R-PDSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

UMH1NFHATN Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad design with a minimum size of 2.5mm x 2.5mm, and a thermal via array with a minimum of 9 vias, to ensure efficient heat dissipation.
  • The UMH1NFHATN requires a bias voltage of 4.5V to 5.5V, and a bias current of 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current within these ranges.
  • The maximum allowed power dissipation for the UMH1NFHATN is 1.5W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even damage.
  • Handle the UMH1NFHATN with ESD-safe materials, and ensure the PCB design includes ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.
  • Store the UMH1NFHATN in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C, and a relative humidity of 60% or less.

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UMH1NFHATN Overview

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