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UMH3NTN - ROHM Semiconductor

Description: NPN+NPN, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor)

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UMH3NTN - ROHM Semiconductor PCB footprint - Other - Other - UMT6
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UMH3NTN - ROHM Semiconductor  - 3D model - Other - UMT6
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UMH3NTN Details

  • Manufacturer Part Number:

    UMH3NTN

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88

  • Package Description:

    SC-88, 6 PIN

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Additional Feature:

    DIGITAL

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

  • VCEsat-Max:

    0.3 V

UMH3NTN Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for UMH3NTN is -40°C to 125°C.
  • To ensure reliability, it is recommended to derate the power dissipation of UMH3NTN according to the ambient temperature, and to use a heat sink or thermal management system to keep the junction temperature below 150°C.
  • The maximum allowable voltage for UMH3NTN is 30V, but it is recommended to operate within the specified voltage range of 10V to 20V for optimal performance and reliability.
  • It is recommended to use ESD protection devices, such as TVS diodes or ESD arrays, to protect UMH3NTN from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.
  • The recommended PCB layout for UMH3NTN includes using a thermal pad, vias, and a heat sink to dissipate heat efficiently. A thermal design that takes into account the thermal resistance of the device, PCB, and heat sink is also recommended.

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