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UMT1N-TP - MCC

Description: Bipolar Transistors - BJT -50V -150mA 150mW Dual Transistors

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Symbol
UMT1N-TP - MCC - PCB symbol
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PCB Footprints
UMT1N-TP - MCC PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SOT-363
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3D Models
UMT1N-TP - MCC - 3D model - SOT23 (6-Pin) - SOT-363
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UMT1N-TP Details

  • Manufacturer Part Number:

    UMT1N-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    6

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    120

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    140 MHz

UMT1N-TP Frequently Asked Questions (FAQs)

  • The recommended land pattern for UMT1N-TP is a rectangular pad with a size of 0.8mm x 1.6mm, with a solder mask clearance of 0.1mm around the pad.
  • Yes, UMT1N-TP is rated for operation up to 150°C, making it suitable for high-temperature applications. However, the device's performance and reliability may degrade at extreme temperatures.
  • UMT1N-TP has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage to the device.
  • The recommended soldering profile for UMT1N-TP is a peak temperature of 260°C, with a dwell time of 10-30 seconds. It's also recommended to use a solder with a melting point of 220°C or higher.
  • Yes, UMT1N-TP is suitable for high-frequency applications up to 1 GHz. However, the device's performance may degrade at higher frequencies, and additional filtering or impedance matching may be required.

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UMT1N-TP Overview

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