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VN0550N3-G - Microchip

Description: N-Channel Enhancement-Mode Vertical DMOS FETs 500V 60Ohm.

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VN0550N3-G - Microchip - PCB symbol
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PCB Footprints
VN0550N3-G - Microchip PCB footprint - Other - Other - TO-92_1
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3D Models
VN0550N3-G - Microchip - 3D model - Other - TO-92_1
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VN0550N3-G Details

  • Manufacturer Part Number:

    VN0550N3-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN PACKAGE-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    TO-92-3

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    9

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    0.05 A

  • Drain-source On Resistance-Max:

    60 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

VN0550N3-G Frequently Asked Questions (FAQs)

  • A good PCB layout for the VN0550N3-G involves keeping the analog and digital grounds separate, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • The VN0550N3-G requires calibration to ensure accurate measurements. Calibration involves applying a known magnetic field and adjusting the device's internal registers to match the expected output. The calibration process is typically done during manufacturing, but it may need to be repeated if the device is exposed to extreme temperatures or magnetic fields.
  • The VN0550N3-G can measure magnetic fields up to ±1300 μT (13 gauss). Exceeding this limit may cause the device to saturate and produce inaccurate readings.
  • The VN0550N3-G communicates with a microcontroller through a standard I²C interface. The device's address is set using the ADDR pin, and the microcontroller can read data from the VN0550N3-G by sending the appropriate I²C commands.
  • The VN0550N3-G has a typical current consumption of 3.5 mA at 3.3 V, making it suitable for battery-powered applications. However, the actual power consumption may vary depending on the operating frequency and the specific application.

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VN0550N3-G Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image VN0550N3-GP013 Microchip Technology Inc

Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92