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VP2106N3-G - Microchip

Description: VP2106N3-G P-Channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip

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PCB Footprints
VP2106N3-G - Microchip PCB footprint - Other - Other - TO-92 (N3)
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VP2106N3-G - Microchip  - 3D model - Other - TO-92 (N3)
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VP2106N3-G Details

  • Manufacturer Part Number:

    VP2106N3-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    TO-92-3

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    10

  • Additional Feature:

    HIGH INPUT IMPEDANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

VP2106N3-G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a thermal management strategy, such as heat sinks, thermal interfaces, or fans. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Implement EMI filters or common-mode chokes if necessary.
  • Use a voltage regulator or a transient voltage suppressor (TVS) to protect the device from voltage spikes and surges. Ensure the protection device is rated for the maximum voltage and current of the application.
  • Follow the recommended PCB assembly and rework guidelines from Microchip Technology Inc. Ensure proper soldering techniques, and use a rework station with a temperature-controlled heat source to prevent damage to the device.

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VP2106N3-G Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92