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VP2110K1-G - Microchip

Description: MOSFET 100V 12Ohm

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VP2110K1-G - Microchip PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 3-Lead TO-236AB (SOT-23)_2022
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3D Models
VP2110K1-G - Microchip  - 3D model - SOT23 (3-Pin) - 3-Lead TO-236AB (SOT-23)_2022
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VP2110K1-G Details

  • Manufacturer Part Number:

    VP2110K1-G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT-23-3

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Microchip Technology Inc

  • YTEOL:

    8

  • Additional Feature:

    LOW THRESHOLD

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.12 A

  • Drain-source On Resistance-Max:

    12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.36 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

VP2110K1-G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for the VP2110K1-G is to keep the device away from high-frequency noise sources and to use a ground plane to reduce electromagnetic interference. The device should be placed on a thermal pad to ensure proper heat dissipation.
  • The VP2110K1-G's differential outputs should be terminated with a 100 ohm resistor to 0V or 3.3V. This ensures proper signal integrity and minimizes reflections.
  • The recommended power supply decoupling for the VP2110K1-G is to use 10uF and 100nF capacitors in parallel to filter the power supply noise. The capacitors should be placed as close as possible to the device.
  • The PLL should be configured to use a 27MHz reference clock and a 2x PLL multiplier to achieve the optimal clock frequency. The PLL should also be configured to use a 1/4 duty cycle clock to minimize jitter.
  • Common issues with the VP2110K1-G include signal integrity problems, PLL lock failures, and power supply noise. These issues can be resolved by optimizing the PCB layout, adjusting the PLL configuration, and filtering the power supply noise.

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VP2110K1-G Overview

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About Microchip

Microchip Technology Inc. is a leading manufacturer of microcontrollers and semiconductor devices for a wide range of applications in the aerospace, automotive, consumer electronics, industrial, and medical industries. Alongside a comprehensive product portfolio, Microchip Technology Inc. also provides easy-to-use development tools that enable engineers to create optimal designs quickly with minimal iterations to reduce risk while lowering total system costs to market. Headquartered in Chandler, Arizona, th

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Part Image VP2110K1-G Supertex Inc

Small Signal Field-Effect Transistor, 0.12A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB