Part Image

W29N01HVBINF - Winbond

Description: 1Gb SLC NAND Flash Memory with uniform 2KB+64B page size

Download W29N01HVBINF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
W29N01HVBINF - Winbond PCB footprint - BGA - BGA - 63-ball
click to zoom
3D Models
W29N01HVBINF - Winbond  - 3D model - BGA - 63-ball
click to zoom

W29N01HVBINF Details

  • Manufacturer Part Number:

    W29N01HVBINF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VFBGA-63

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Winbond Electronics Corp

  • YTEOL:

    5

  • Command User Interface:

    YES

  • Data Polling:

    NO

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Sectors/Size:

    1K

  • Number of Terminals:

    63

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Page Size:

    1K words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Programming Voltage:

    3.3 V

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Toggle Bit:

    YES

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.025 ms

W29N01HVBINF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the W29N01HVBINF is -40°C to 85°C.
  • The hold signal (HOLD#) should be asserted low during a write operation to prevent any other device from accessing the memory array.
  • The write protect (WP#) pin is used to prevent accidental writes to the memory array. When WP# is low, the memory array is write-protected.
  • A sector erase operation can be performed by sending the erase command (0x60) followed by the sector address and then the erase confirm command (0xD0).
  • The maximum number of erase cycles for the W29N01HVBINF is 100,000 cycles.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

W29N01HVBINF Overview

Use the download button to access the W29N01HVBINF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like W29N0, or try a keyword search, such as Flash Memories

Parts related to W29N01HVBINF

Showing 0 results