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W29N02GVBIAF - Winbond

Description: 2Gb SLC NAND Flash Memory with uniform 2KB+64B page size

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PCB Footprints
W29N02GVBIAF - Winbond PCB footprint - BGA - BGA - 63-ball
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3D Models
W29N02GVBIAF - Winbond  - 3D model - BGA - 63-ball
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W29N02GVBIAF Details

  • Manufacturer Part Number:

    W29N02GVBIAF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VFBGA-63

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Winbond Electronics Corp

  • YTEOL:

    6

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Serial Bus Type:

    ONFI 1.0

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.000025 ms

  • Write Protection:

    HARDWARE

W29N02GVBIAF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the W29N02GVBIAF is -40°C to 85°C.
  • The W29N02GVBIAF can endure up to 100,000 program/erase cycles before it starts to degrade.
  • The typical programming time for the W29N02GVBIAF is around 10-15 seconds for a full chip erase, and around 10-20 microseconds for a single byte program.
  • Yes, the W29N02GVBIAF is compatible with both 3.3V and 1.8V voltage supplies, making it suitable for a wide range of applications.
  • The data retention period for the W29N02GVBIAF is a minimum of 10 years at room temperature, and up to 100 years at 85°C.

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W29N02GVBIAF Overview

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