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W29N02KVBIAF - Winbond

Description:  Basic Features – Density: 2Gbit (Single chip solution) – Vcc: 2.7V to 3.6V – Bus width: x8 – Operating temperature  Industrial: -40°C to 85°C  Single-Level Cell (SLC) technology  Organization – Density: 2G-bit/256M-byte – Page size  2,176 bytes – Block size  64 pages  Highest Performance – Read performance (Max.)  Random read: 25us  Sequential read cycle: 25ns – Write Erase performance  Page program time: 250us (typ.)  Block erase time: 2ms (typ.) – Endurance: 60,000 Erase/Pr

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W29N02KVBIAF - Winbond - PCB symbol

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W29N02KVBIAF - Winbond PCB footprint - BGA - BGA - Fine-Pitch Ball Grid Array 63-ball

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W29N02KVBIAF - Winbond - 3D model - BGA - Fine-Pitch Ball Grid Array 63-ball

Datasheet Download Datasheet
Stock & Prices Price & Stock for W29N02KVBIAF
Part Number W29N02KVBIAF
Manufacturer Winbond
Pin Count 63
Part Category Integrated Circuit
Package Category BGA
Footprint Name BGA - Fine-Pitch Ball Grid Array 63-ball
Released Date Jul 22, 2024
Last Modified Date Jul 22, 2024 11:33 AM UTC
Pinout / Pin List Click Here (Member Only)

W29N02KVBIAF Details

Manufacturer Part Number:
W29N02KVBIAF
Rohs Code:
Yes
Part Life Cycle Code:
Active
ECCN Code:
EAR99
HTS Code:
8542.32.00.51
Manufacturer:
Winbond Electronics Corp
YTEOL:
6
Data Retention Time-Min:
10
JESD-30 Code:
R-PBGA-B63
Length:
11 mm
Memory Density:
2147483648 bit
Memory IC Type:
FLASH
Memory Width:
8
Number of Functions:
1
Number of Terminals:
63
Number of Words:
268435456 words
Number of Words Code:
256000000
Operating Mode:
ASYNCHRONOUS
Operating Temperature-Max:
85 °C
Operating Temperature-Min:
-40 °C
Organization:
256MX8
Package Body Material:
PLASTIC/EPOXY
Package Code:
VFBGA
Package Equivalence Code:
BGA63,10X12,32
Package Shape:
RECTANGULAR
Package Style:
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial:
SERIAL
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Programming Voltage:
3.3 V
Seated Height-Max:
1 mm
Serial Bus Type:
ONFI 1.0
Standby Current-Max:
0.00005 A
Supply Current-Max:
0.035 mA
Supply Voltage-Max (Vsup):
3.6 V
Supply Voltage-Min (Vsup):
2.7 V
Supply Voltage-Nom (Vsup):
3.3 V
Surface Mount:
YES
Technology:
CMOS
Temperature Grade:
INDUSTRIAL
Terminal Form:
BALL
Terminal Pitch:
0.8 mm
Terminal Position:
BOTTOM
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Type:
SLC NAND TYPE
Width:
9 mm
Write Cycle Time-Max (tWC):
0.025 ms
Write Protection:
HARDWARE

W29N02KVBIAF Frequently Asked Questions (FAQs)

The recommended operating voltage range for the W29N02KVBIAF is 2.7V to 3.6V, with a typical voltage of 3.3V.
During power-up, the HOLD# pin should be kept high until the power supply has reached a stable voltage. During power-down, the HOLD# pin should be kept low to prevent any unwanted writes or erases.
The W29N02KVBIAF supports up to 100,000 erase cycles per sector, with a minimum of 10,000 erase cycles guaranteed.
The W29N02KVBIAF has a density of 2Gb (256MB) and is organized as 16,384 pages x 128 bytes per page.
The WP# pin is a write protect pin that prevents writes to the status register and the first and last 256 bytes of the device. It should be tied high to enable writes or low to disable writes.

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W29N02KVBIAF Overview

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