Part Image

W29N04GVBIAF - Winbond

Description: 4Gb SLC NAND Flash MHz VFBGA63

Download W29N04GVBIAF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
W29N04GVBIAF - Winbond PCB footprint - BGA - BGA - W29N04GVBIAF
click to zoom
3D Models
W29N04GVBIAF - Winbond  - 3D model - BGA - W29N04GVBIAF
click to zoom

W29N04GVBIAF Details

  • Manufacturer Part Number:

    W29N04GVBIAF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VFBGA-63

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Winbond Electronics Corp

  • YTEOL:

    6

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Serial Bus Type:

    ONFI 1.0

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.025 ms

  • Write Protection:

    HARDWARE

W29N04GVBIAF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the W29N04GVBIAF is -40°C to 85°C.
  • The W29N04GVBIAF can endure up to 100,000 program/erase cycles before it starts to degrade.
  • The typical programming time for the W29N04GVBIAF is around 10-15 seconds for a full chip erase, and around 10-20 microseconds for a byte program operation.
  • No, the W29N04GVBIAF does not support simultaneous read and write operations. It is a serial flash memory device that can only perform one operation at a time.
  • The minimum voltage required for the W29N04GVBIAF to operate is 2.7V.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

W29N04GVBIAF Overview

Use the download button to access the W29N04GVBIAF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like W29N0, or try a keyword search, such as Flash Memories

Parts related to W29N04GVBIAF

Showing 0 results