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W29N04GZBIBF - Winbond

Description: Basic Features – Density : 4Gbit (Single chip solution) – Vcc : 1.7V to 1.95V – Bus width : x8 x16 – Operating temperature  Industrial: -40°C to 85°C  Industrial Plus: -40°C to 105°C  Single-Level Cell (SLC) technology.  Organization – Density: 4G-bit/512M-byte – Page size  2,112 bytes (2048 + 64 bytes)  1,056 words (1024 + 32 words) – Block size  64 pages (128K + 4K bytes)  64 pages (64K + 2K words)  Highest Performance – Read performance (Max.)  Random read: 25us  Sequential

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PCB Footprints
W29N04GZBIBF - Winbond PCB footprint - BGA - BGA - Fine-Pitch Ball Grid Array 63-ball
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W29N04GZBIBF - Winbond  - 3D model - BGA - Fine-Pitch Ball Grid Array 63-ball
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W29N04GZBIBF Details

  • Manufacturer Part Number:

    W29N04GZBIBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    VFBGA-63

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Winbond Electronics Corp

  • YTEOL:

    6

  • Data Retention Time-Min:

    10

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    1 mm

  • Serial Bus Type:

    ONFI 1.0

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.02 mA

  • Supply Voltage-Max (Vsup):

    1.95 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Type:

    SLC NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.035 ms

  • Write Protection:

    HARDWARE

W29N04GZBIBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the W29N04GZBIBF is -40°C to 85°C.
  • The W29N04GZBIBF can endure up to 100,000 program/erase cycles before it starts to degrade.
  • The typical programming time for the W29N04GZBIBF is around 10-15 seconds for a full chip erase and around 10-20 microseconds for a byte program operation.
  • No, the W29N04GZBIBF does not support simultaneous read and write operations. It is a serial flash memory device that can only perform one operation at a time.
  • The minimum clock frequency required for the W29N04GZBIBF is 10 kHz.

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