WNSC2M12120R6Q - WeEn Semiconductors

WNSC2M12120R6Q Details

• Manufacturer Part Number:

  WNSC2M12120R6Q

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Factory Lead Time:

  16 Weeks

• Manufacturer:

  WeEn Semiconductor Co Ltd

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  612.5 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  1200 V

• Drain Current-Max (ID):

  216 A

• Drain-source On Resistance-Max:

  0.025 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  23 pF

• JEDEC-95 Code:

  TO-247

• JESD-30 Code:

  R-PSFM-T4

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Packing Method:

  TUBE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  1071 W

• Pulsed Drain Current-Max (IDM):

  430 A

• Reference Standard:

  IEC-60134

• Surface Mount:

  NO

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE