WNSC2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	WNSC2D04650DJ WeEn Semiconductors	1	Schottky Diodes & Rectifiers WNSC2D04650D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD	Other	WNSC2D04650DJ	3D model available Symbol and footprint available 3	1 Download Model
	WNSC2M12120TB6J WeEn Semiconductors	1	Silicon Carbide MOSFET, Single, N Channel, 134 A, 1.2 kV, 0.029 ohm, TSPAK	Other	WNSC2M12120TB6J	3D model not available Symbol and footprint available 2	1 Download Model
	WNSC2D10650XQ WeEn Semiconductors	1	Highly stable switching performance• Extremely fast reverse recovery time• Superior in efficiency to Silicon Diode alternatives• Reduced losses in associated MOSFET• Reduced EMI• Reduced cooling requirements• RoHS compliant• Insulated package rated at 2500V RMS	Transistor Outline, Vertical	WNSC2D10650XQ	3D model available Symbol and footprint available 3	1 Download Model
	WNSC2D06650DJ WeEn Semiconductors	1	Silicon Carbide Schottky Diode Single 650 V 6 A 9 nC TO-252 (DPAK)	Other	WNSC2D06650DJ	3D model not available Symbol and footprint available 2	1 Download Model

	WNSC2D301200W6Q WeEn Semiconductors	1	Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies 1.2 kV, 30 A, 68 nC, TO-247	Other	WNSC2D301200W6Q	3D model not available Symbol and footprint available 2	1 Download Model
	WNSC2D021200D6J WeEn Semiconductors	1	Schottky Diodes & Rectifiers WNSC2D021200D/TO252/REEL 13\" Q1/T1 *STANDARD MARK SMD	Other	WNSC2D021200D6J	3D model not available Symbol and footprint available 2	1 Download Model
	WNSC2M30120R6Q WeEn Semiconductors	1	N-Channel Silicon Carbide MOSFET -55 to 175 °C,1200 V,106.4	Other	WNSC2M30120R6Q	3D model available Symbol and footprint available 3	1 Download Model
	WNSC2M75120R6Q WeEn Semiconductors	1	Silicon Carbide MOSFET, Single, N Channel, 53.9 A, 1.2 kV, 0.09 ohm, TO-247 , -55°C ~ +175°C	Other	WNSC2M75120R6Q	3D model available Symbol and footprint available 3	1 Download Model
	WNSC2M20120B7-A6J WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor		WNSC2M20120B7-A6J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M20120R-A6Q WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor		WNSC2M20120R-A6Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC201200CWQ WeEn Semiconductor Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-247		WNSC201200CWQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2D021200MB6J WeEn Semiconductor Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3.1A, 1200V V(RRM), Silicon Carbide		WNSC2D021200MB6J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M75120W6Q WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 42.8A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		WNSC2M75120W6Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M20120TB6J WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor		WNSC2M20120TB6J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2D101200WQ WeEn Semiconductor Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide		WNSC2D101200WQ	3D model not available Symbol and footprint not available 0	0 Build or Request

	WNSC2D201200BT26J WeEn Semiconductors	1	Schottky Diodes & Rectifiers WNSC2D201200BT2/TO263-2L/REEL 13\" Q1/T1 *STANDARD MARK SMD		WNSC2D201200BT26J	3D model available Symbol and footprint not available 1	1 Download Model
	WNSC2M1K0170B7-AJ WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 6A I(D), 1700V, 1.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263		WNSC2M1K0170B7-AJ	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M150120W-A WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor		WNSC2M150120W-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M75120B7-A6J WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 43A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263		WNSC2M75120B7-A6J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M40120B7-A6J WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 70A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263		WNSC2M40120B7-A6J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2D401200CW6Q WeEn Semiconductor Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 42A, 1200V V(RRM), Silicon Carbide, TO-247		WNSC2D401200CW6Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M45065W6Q WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 82A I(D), 650V, 0.058ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		WNSC2M45065W6Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M40120B76J WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 86.3A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263		WNSC2M40120B76J	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2D12650TJ WeEn Semiconductor Co Ltd	1	Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide		WNSC2D12650TJ	3D model not available Symbol and footprint not available 0	0 Build or Request
	WNSC2M40120W WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 70.4A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		WNSC2M40120W	3D model not available Symbol and footprint not available 0	0 Build or Request
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