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YFZVFHTR10B - ROHM Semiconductor

Description: 500mW 10V, SOD-323HE, Zener Diode for Automotive

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YFZVFHTR10B - ROHM Semiconductor PCB footprint - Other - Other - TUMD2M_2019
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YFZVFHTR10B - ROHM Semiconductor  - 3D model - Other - TUMD2M_2019
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YFZVFHTR10B Details

  • Manufacturer Part Number:

    YFZVFHTR10B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-108B, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6.65

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Reference Standard:

    AEC-Q101

  • Reference Voltage-Nom:

    10 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Voltage Tol-Max:

    2.54%

  • Working Test Current:

    20 mA

YFZVFHTR10B Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with multiple vias connecting to a solid ground plane to ensure efficient heat dissipation.
  • The YFZVFHTR10B requires a bias voltage of 5V to 15V, with a recommended operating current of 10mA to 50mA. Ensure the bias circuit is designed to provide a stable voltage and current supply.
  • The maximum power dissipation for the YFZVFHTR10B is 1W, with a derating of 8.33mW/°C above 25°C. Ensure the device is operated within this limit to prevent overheating and damage.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the YFZVFHTR10B from electrostatic discharge. Additionally, follow proper handling and storage procedures to prevent ESD damage.
  • Store the YFZVFHTR10B in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C, with a relative humidity of 60% or less.

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YFZVFHTR10B Overview

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Part Image TFZFHTR10B ROHM Semiconductor

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