FQD8P10TM Model Download Search Results
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FQD8P10TM
onsemi
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1 | Low Crss ( Typ. 30pF); 100% avalanche tested; Low gate charge ( Typ. 12nC); -6.6A, -100V, RDS(on) = 530mΩ(Max.) @VGS = -10 V, ID = -3.3A | Other | FQD8P10TM |
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FQD8P10TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FQD8P10TM |
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FQD8P10TM_F085
onsemi
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1 | Fairchild FQD8P10TM_F085 P-channel MOSFET Transistor, 6.6 A, -100 V, 3-Pin DPAK | Other | FQD8P10TM_F085 |
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FQD8P10TM-F085
onsemi
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1 | RoHS Compliant; Fast switching; Qualified to AEC Q101; 100% avalanche tested; Low Crss ( typical 30 pF); Low gate charge ( typical 12 nC); Improved dv/dt capability ; 6.6A, -100V, RDS(on) = 0.53O @VGS = -10 V | Other | FQD8P10TM-F085 |
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FQD8P10TM-SB82052
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FQD8P10TM-SB82052 |
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FQD8P10TM_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | FQD8P10TM_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
![Part Image](["https://componentsearchengine.com/Images/3/FQD8P10TM_F085.jpg",null,null])
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