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ZTX451STZ - Diodes Incorporated

Description: Bipolar Transistors - BJT NPN Medium Power

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ZTX451STZ - Diodes Incorporated - PCB symbol
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PCB Footprints
ZTX451STZ - Diodes Incorporated PCB footprint - Other - Other - E-Line
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3D Models
ZTX451STZ - Diodes Incorporated - 3D model - Other - E-Line
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ZTX451STZ Details

  • Manufacturer Part Number:

    ZTX451STZ

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-92

  • Package Description:

    TO-92 COMPATIBLE, E-LINE PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSIP-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    CECC

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

ZTX451STZ Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the ZTX451STZ is a standard SOT23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper biasing, the ZTX451STZ requires a minimum collector-emitter voltage (VCE) of 1.5V and a maximum collector current (IC) of 100mA. Additionally, the base-emitter voltage (VBE) should be around 0.65V to 0.75V for optimal performance.
  • The ZTX451STZ has an operating temperature range of -55°C to +150°C, making it suitable for a wide range of applications.
  • To protect the ZTX451STZ from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive packaging and storage materials.
  • Yes, the ZTX451STZ is suitable for high-frequency applications up to 100MHz due to its low capacitance and high transition frequency (fT) of 150MHz.

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ZTX451STZ Overview

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ZTX451STZ Alternates

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Image Part Number Model
Part Image FXT451STOF Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Part Image FXT451STOB Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Part Image ZTX451 Zetex / Diodes Inc

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Part Image ZTX451STOA Diodes Incorporated

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Part Image FXT451STOA Diodes Incorporated

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
For a full list of alternate parts for ZTX451STZ, check out Findchips.com