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ZVN4206ASTZ - Diodes Incorporated

Description: N-Channel 60 V 600mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)

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ZVN4206ASTZ - Diodes Incorporated PCB footprint - Other - Other - TO-92 Compatible
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ZVN4206ASTZ - Diodes Incorporated  - 3D model - Other - TO-92 Compatible
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ZVN4206ASTZ Details

  • Manufacturer Part Number:

    ZVN4206ASTZ

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-92

  • Package Description:

    TO-92 COMPATIBLE, E-LINE PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    1

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.6 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZVN4206ASTZ Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a multi-layer PCB with a solid ground plane and thermal vias to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, ensure that the device is placed on a thermal pad with a minimum size of 10mm x 10mm.
  • To ensure proper biasing, ensure that the input voltage (VIN) is within the recommended range of 2.5V to 5.5V. Additionally, ensure that the enable pin (EN) is properly biased to either VCC or GND, depending on the desired state. Refer to the datasheet for specific biasing requirements.
  • For optimal performance, it is recommended to use a 10uF ceramic capacitor with a voltage rating of 6.3V or higher, placed as close as possible to the VIN pin. Additionally, a 100nF ceramic capacitor can be used in parallel to filter high-frequency noise.
  • To ensure ESD protection, it is recommended to use a TVS diode (e.g., SMF05C) in parallel with the device, connected between VIN and GND. This will provide protection against electrostatic discharge events.
  • The recommended operating temperature range for the ZVN4206ASTZ is -40°C to 125°C. However, it is essential to ensure that the device is properly derated for temperature to prevent thermal runaway and ensure reliable operation.

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ZVN4206ASTZ Overview

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ZVN4206ASTZ Alternates

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Image Part Number Model
Part Image ZVN4206A Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image ZVN4206ASTZ Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Part Image ZVN4206ASTOB Diodes Incorporated

600mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

Part Image ZVN4206ASTOA Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image ZVN4206ASTOB Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.6A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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