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ZXMHC10A07N8TC - Diodes Incorporated

Description: MOSFET Dual N/P-Ch 100V 1A/0.85A SOIC8 Diodes Inc ZXMHC10A07N8TC Quad N/P-channel MOSFET Transistor, 8-Pin SO

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ZXMHC10A07N8TC - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8(Thickness=1.7mm)
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ZXMHC10A07N8TC - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8(Thickness=1.7mm)
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ZXMHC10A07N8TC Details

  • Manufacturer Part Number:

    ZXMHC10A07N8TC

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT

  • Package Description:

    SOP-8

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.8 A

  • Drain-source On Resistance-Max:

    0.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    4

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMHC10A07N8TC Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the ZXMHC10A07N8TC is a standard SOT23 package with a 1.3mm x 1.3mm body size and a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure proper biasing, follow the recommended operating conditions and biasing circuits provided in the datasheet. Typically, a voltage regulator or a resistive divider network is used to set the input voltage and current limits.
  • The maximum power dissipation of the ZXMHC10A07N8TC is 250mW. However, it's essential to consider the thermal resistance, junction temperature, and ambient temperature to ensure the device operates within safe limits.
  • The ZXMHC10A07N8TC is rated for operation up to 125°C. However, it's crucial to consider the device's thermal characteristics, such as thermal resistance and junction temperature, to ensure reliable operation in high-temperature environments.
  • To protect the ZXMHC10A07N8TC from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Additionally, consider implementing ESD protection circuits in your design.

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ZXMHC10A07N8TC Overview

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