Part Image

ZXMN3A01ZTA - Diodes Incorporated

Description: Diodes Inc ZXMN3A01ZTA N-channel MOSFET Transistor, 3.3 A, 30 V, 3-Pin SOT-89

Download ZXMN3A01ZTA Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
ZXMN3A01ZTA - Diodes Incorporated PCB footprint - Other - Other - SOT89_24
click to zoom
3D Models
ZXMN3A01ZTA - Diodes Incorporated  - 3D model - Other - SOT89_24
click to zoom

ZXMN3A01ZTA Details

  • Manufacturer Part Number:

    ZXMN3A01ZTA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.3 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMN3A01ZTA Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern around the thermal pad is suggested. Additionally, a solid ground plane on the bottom layer can help to reduce thermal resistance.
  • The ZXMN3A01ZTA requires a bias voltage of 2.5V to 5.5V. Ensure the input voltage is within this range and the output is properly terminated to avoid oscillations. A 10nF to 100nF decoupling capacitor is recommended between the bias pin and ground.
  • The maximum power dissipation for the ZXMN3A01ZTA is 1.25W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended operating range to avoid thermal shutdown.
  • Yes, the ZXMN3A01ZTA is suitable for high-frequency applications up to 1GHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance. A 50Ω termination is recommended for optimal performance.
  • Store the ZXMN3A01ZTA in a dry, cool place away from direct sunlight. Handle the device by the body, avoiding touching the pins to prevent electrostatic discharge (ESD) damage. Use an anti-static wrist strap or mat when handling the device.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

ZXMN3A01ZTA Overview

Use the download button to access the ZXMN3A01ZTA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ZXMN3, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to ZXMN3A01ZTA

Showing 0 results