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ZXMN3B01FTA - Diodes Incorporated

Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

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ZXMN3B01FTA - Diodes Incorporated PCB footprint - Other - Other - ZXMN3B01FTA-5
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ZXMN3B01FTA - Diodes Incorporated  - 3D model - Other - ZXMN3B01FTA-5
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ZXMN3B01FTA Details

  • Manufacturer Part Number:

    ZXMN3B01FTA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMN3B01FTA Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the tab of the ZXMN3B01FTA, with multiple vias to dissipate heat effectively. A minimum of 2oz copper thickness is recommended.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet. Additionally, ensure the input voltage is within the recommended range, and the output is properly terminated to prevent oscillations.
  • When handling the ZXMN3B01FTA, take precautions to prevent electrostatic discharge (ESD) damage by using an ESD wrist strap or mat. Also, avoid touching the pins or die to prevent damage from human body model (HBM) or charged device model (CDM) events.
  • Yes, the ZXMN3B01FTA is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, and ensure the device is properly derated for the specific application.
  • The thermal resistance values for the ZXMN3B01FTA are typically available in the datasheet or can be obtained from the manufacturer. For the ZXMN3B01FTA, the thermal resistance (RθJA) is typically around 40°C/W, and the thermal resistance (RθJC) is around 10°C/W.

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ZXMN3B01FTA Overview

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Part Image ZXMN3B01FTC Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET