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ZXMN3F30FHTA - Diodes Incorporated

Description: Diodes Inc ZXMN3F30FHTA N-channel MOSFET Transistor, 4.6 A, 30 V, 3-Pin SOT-23 • Low on-resistance • 4.5V gate drive capability • SOT23

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ZXMN3F30FHTA - Diodes Incorporated - PCB symbol
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PCB Footprints
ZXMN3F30FHTA - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_20
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3D Models
ZXMN3F30FHTA - Diodes Incorporated - 3D model - SOT23 (3-Pin) - SOT23_20
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ZXMN3F30FHTA Details

  • Manufacturer Part Number:

    ZXMN3F30FHTA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.8 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

ZXMN3F30FHTA Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the ZXMN3F30FHTA is a standard SOT23 package with a 1.5mm x 1.5mm pad size, and a thermal pad for heat dissipation.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1kΩ) and add a pull-down resistor (e.g., 10kΩ) from the gate to ground. This ensures the MOSFET is fully enhanced and minimizes power consumption.
  • The maximum SOA for the ZXMN3F30FHTA is typically defined by the voltage and current ratings. Ensure the device operates within the specified voltage range (30V) and current rating (3A) to prevent damage or premature failure.
  • To manage thermal performance, ensure good thermal conductivity between the device and the PCB, use a thermal pad or heat sink, and maintain a maximum junction temperature (Tj) of 150°C to prevent thermal runaway.
  • Handle the ZXMN3F30FHTA with ESD-protective equipment and follow standard ESD handling procedures to prevent damage. The device has an internal ESD protection diode, but external protection measures are still recommended.

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ZXMN3F30FHTA Overview

Use the download button to access the ZXMN3F30FHTA schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like ZXMN3, or try a keyword search, such as Small Signal Field-Effect Transistors

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Part Image ZXMN3F30FHTA Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET