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ZXMS6005DGQ-13 - Diodes Incorporated

Description: 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET

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PCB Footprints
ZXMS6005DGQ-13 - Diodes Incorporated PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223 (Type DN)
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3D Models
ZXMS6005DGQ-13 - Diodes Incorporated  - 3D model - SOT223 (3-Pin) - SOT223 (Type DN)
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ZXMS6005DGQ-13 Details

  • Manufacturer Part Number:

    ZXMS6005DGQ-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn)

  • Time@Peak Reflow Temperature-Max (s):

    30

ZXMS6005DGQ-13 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, with multiple vias connecting the thermal pad to the ground plane. This helps to dissipate heat efficiently.
  • To ensure the device is properly biased, make sure to follow the recommended biasing circuit in the datasheet. Additionally, ensure that the input voltage is within the recommended range, and that the output is properly terminated to prevent oscillations.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage. Use an ESD wrist strap or mat, and handle the device by the body or pins, avoiding touching the die. Also, avoid bending or flexing the leads excessively.
  • While the ZXMS6005DGQ-13 is a high-performance device, it may not be suitable for high-reliability or automotive applications without additional qualification and testing. Consult with Diodes Incorporated or a qualified reliability engineer to determine the device's suitability for your specific application.
  • The thermal resistance values for the device can be found in the datasheet. To calculate junction temperature, use the formula: Tj = Tc + (Pd x θja), where Tj is the junction temperature, Tc is the case temperature, Pd is the power dissipation, and θja is the junction-to-ambient thermal resistance.

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ZXMS6005DGQ-13 Overview

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