Price & Stock for SCT10N120
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DigiKey
SICFET N-CH 1200V 12A HIP247
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI # 497-16597-5-NDSTMicroelectronics Tube Compliant 0
TubeBuy Now Download SCT10N120 Model Download Datasheet -
Avnet Americas
- Bulk (Alt: SCT10N120)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI # SCT10N120STMicroelectronics Bulk 600 Compliant 0 - 9600 $4.02240
- 4800 $4.04335
- 2400 $4.06430
- See More
Buy Now Download SCT10N120 Model Download Datasheet -
Newark
SIC MOSFET, N-CH, 1.2KV, 12A, HIP247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:150W RoHS Compliant: Yes
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI # 07AH6931STMicroelectronics Bulk 1 Compliant 75 - 1 $7.57000
Buy Now Download SCT10N120 Model Download Datasheet -
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI #STMicroelectronics 1 Compliant 0 - 100 $4.49000
- 10 $5.17000
- 1 $8.81000
Buy Now Download SCT10N120 Model Download Datasheet -
TME
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI # SCT10N120STMicroelectronics 1 Compliant 56 - 10 $8.83000
- 5 $9.16000
- 1 $9.70000
Buy Now Download SCT10N120 Model Download Datasheet -
Vyrian
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120 DISTI #STMicroelectronics Compliant 7970 Download SCT10N120 Model Download Datasheet