Price & Stock for SCT10N120AG
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DigiKey
SICFET N-CH 1200V 12A HIP247
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # 497-SCT10N120AG-NDSTMicroelectronics Tube 1 Compliant 580
Tube- 120 $5.12500
- 30 $5.53100
- 1 $6.93000
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Avnet Americas
Silicon Carbide Power MOSFET 1200V 12A 520milliOhm 3-Pin HiP247 Tube - Rail/Tube (Alt: SCT10N120AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # SCT10N120AGSTMicroelectronics Tube 600 32 Weeks, 0 Days Not Compliant 0 - 60000 $5.35050
- 6000 $5.47350
- 4800 $5.59650
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Mouser Electronics
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # 511-SCT10N120AGSTMicroelectronics Compliant 578 - 600 $5.12000
- 100 $5.13000
- 25 $5.53000
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Newark
Mosfet, N-Ch, 1.2Kv, 12A, 200Deg C, 150W Rohs Compliant: Yes |Stmicroelectronics SCT10N120AG
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # 69AH2148STMicroelectronics Bulk 1 Compliant 0 - 120 $6.45000
- 60 $6.66000
- 25 $6.92000
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STMicroelectronics
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI #STMicroelectronics 1 Compliant 578 - 250 $5.03000
- 100 $5.03000
- 25 $5.42000
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Future Electronics
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI #STMicroelectronics Tube 600 32 Weeks Compliant 0Tube - 400 $5.97000
- 125 $6.07000
- 40 $6.12000
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Future Electronics
1200 V 12 A 520 Ohm Automotive-Grade Silicon Carbide Power MOSFET
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI #STMicroelectronics Cut Tape/Mini-Reel 600 32 Weeks Compliant 0Cut Tape/Mini-Reel - 15 $5.97000
- 10 $6.07000
- 4 $6.15000
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TME
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 24A; 150W
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # SCT10N120AGSTMicroelectronics 1 Compliant 0 - 30 $9.57000
- 10 $10.26000
- 3 $11.45000
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Avnet Silica
Silicon Carbide Power MOSFET 1200V 12A 520milliOhm 3-Pin HiP247 Tube (Alt: SCT10N120AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # SCT10N120AGSTMicroelectronics 30 17 Weeks, 0 Days Compliant Silica - 0 Buy Now Download SCT10N120AG Model Download Datasheet -
EBV Elektronik
Silicon Carbide Power MOSFET 1200V 12A 520milliOhm 3-Pin HiP247 Tube (Alt: SCT10N120AG)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT10N120AG DISTI # SCT10N120AGSTMicroelectronics 30 42 Weeks, 0 Days Compliant EBV - 0 Buy Now Download SCT10N120AG Model Download Datasheet