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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70T3339S133BF Renesas Electronics	1	The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3339S133BF	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A1818DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1818DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	709349L7PFGI8 Renesas Electronics	1	The 709349 is a high-speed 4K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	709349L7PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70V06L15JG8 Renesas Electronics	1	The 70V06 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	70V06L15JG8	3D model not available Symbol and footprint available 2	1 Download Model

	RMQCEA3618DGBA-182#AC0 Renesas Electronics	1	The RMQCEA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQCEA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQCEA3618DGBA-182#AC0	3D model available Symbol and footprint available 3	1 Download Model
	71V3556SA150BG Renesas Electronics	1	The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.	BGA	71V3556SA150BG	3D model available Symbol and footprint available 3	1 Download Model
	71V67603S150BGGI Renesas Electronics	1	The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.	BGA	71V67603S150BGGI	3D model available Symbol and footprint available 3	1 Download Model
	709349L6PFG8 Renesas Electronics	1	The 709349 is a high-speed 4K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	709349L6PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70V07S35G Renesas Electronics	1	The 70V07 is a high-speed 32K x 8 Dual-Port Static RAM designed to be used as a stand-alone 256K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Other	70V07S35G	3D model available Symbol and footprint available 3	1 Download Model
	70T633S12BC8 Renesas Electronics	1	The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T633S12BC8	3D model available Symbol and footprint available 3	1 Download Model
	71V65803S100BGG Renesas Electronics	1	The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65803S100BGG	3D model available Symbol and footprint available 3	1 Download Model
	70T3339S133BCI8 Renesas Electronics	1	The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3339S133BCI8	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-22IA0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-22IA0	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-22IB0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-22IB0	3D model available Symbol and footprint available 3	1 Download Model
	M48Z12-200PC1 STMicroelectronics	1	NVSRAM (Non-Volatile SRAM) Memory IC 16Kbit Parallel 200 ns 24-PCDIP, CAPHAT® 4.5V ~ 5.5V 0°C ~ 70°C (TA)	Ceramic Dual-In-Line Packages	M48Z12-200PC1	3D model not available Symbol and footprint available 2	1 Download Model

	70T651S10BF8 Renesas Electronics	1	The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T651S10BF8	3D model available Symbol and footprint available 3	1 Download Model
	7008L20PFGI8 Renesas Electronics	1	The 7008 is a high-speed 64K x 8 Dual-Port Static RAM designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	7008L20PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	R1QBA7218ABG-20IA0 Renesas Electronics	1	Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read	BGA	R1QBA7218ABG-20IA0	3D model available Symbol and footprint available 3	1 Download Model
	7005L25G Renesas Electronics	1	The 7005 is a high-speed 8K x 8 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7005L25G	3D model available Symbol and footprint available 3	1 Download Model
	RMQC4A3618DGBA-302#AC0 Renesas Electronics	1	The RMQC4A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQC4A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQC4A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	71V67903S85BQI Renesas Electronics	1	The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67903S85BQI	3D model available Symbol and footprint available 3	1 Download Model
	70T3589S133BCI Renesas Electronics	1	The 70T3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3589S133BCI	3D model available Symbol and footprint available 3	1 Download Model
	71V416S15YG Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V416S15YG	3D model available Symbol and footprint available 3	1 Download Model
	71V65803S150BG Renesas Electronics	1	The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65803S150BG	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3618DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS3A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
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