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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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IHLP2525EZER1R0M01
Vishay
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1 | Shielded construction• Frequency range below 1.0 MHz• Lowest DCR/μH, in this package size• Powdered iron composition provides softsaturation• Handles high transient current spikes withoutsaturation• Saturation and inductance extremely stable overtemperature• Ultra low buzz noise, due to composite construction• IHLP design; PATENT(S): www.vishay.com/patents• Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912 | Inductors Precision Moulded | IHLP2525EZER1R0M01 |
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CRG0805-R-1R80FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.8R,±1% | Other | CRG0805-R-1R80FT |
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HPCR0402-R-1R91FT
Venkel
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1 | High Power CR,0402,1/8W,1.91R,±1% | Resistor Chip | HPCR0402-R-1R91FT |
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HPCR0402-R-1R1JT
Venkel
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1 | High Power CR,0402,1/8W,1.1R,±5% | Resistor Chip | HPCR0402-R-1R1JT |
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ASPI-0520LR-1R0M-T2
ABRACON
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1 | Inductor Power Molded Wirewound 1uH 20% 7.5A 0.0185Ohm DCR 2220 T/R | Other | ASPI-0520LR-1R0M-T2 |
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CRG0805-R-1R8JT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.8R,±5% | Other | CRG0805-R-1R8JT |
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CRG0805-R-1R62FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.62R,±1% | Other | CRG0805-R-1R62FT |
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ASPI-0630LR-1R5M-T15
ABRACON
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1 | 1.5 µH Shielded Molded Inductor 10 A 12mOhm Max Nonstandard | Other | ASPI-0630LR-1R5M-T15 |
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ASPI-8030LR-1R0M-T
ABRACON
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1 | MEMS Crystal Oscillator 22.5792MHz ñ50ppm 4-Pin SMD T/R | Inductors Precision Moulded | ASPI-8030LR-1R0M-T |
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IHLP2020CZER1R0M8A
Vishay
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1 | IHLP® Automotive Inductors, High Temperature (180 °C) Series | Inductors Precision Moulded | IHLP2020CZER1R0M8A |
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CRG0805-R-1R18FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.18R,±1% | Other | CRG0805-R-1R18FT |
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IHLP2525CZER1R5MA1
Vishay
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1 | Inductor Power Shielded Wirewound 1.5uH 20% 100KHz Powdered Iron 9A 0.015Ohm DCR 2525 Automotive T/R | Inductors Precision Moulded | IHLP2525CZER1R5MA1 |
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IHLP4040DZER1R0M51
Vishay
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1 | Fixed Inductors 1uH 20% | Inductors Precision Moulded | IHLP4040DZER1R0M51 |
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R1RP0416DSB-2PI#D1
Renesas Electronics
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1 | The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-2PI#D1 |
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R1RP0416DSB-2LR#S1
Renesas Electronics
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0 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Small Outline Packages | R1RP0416DSB-2LR#S1 |
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R1RP0416DGE-2PR#B1
Renesas Electronics
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0 | The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. | Other | R1RP0416DGE-2PR#B1 |
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FP1107R1-R51-R
Eaton
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1 | 510 nH Unshielded Drum Core, Wirewound Inductor 55 A 0.29mOhm Nonstandard, -40°C ~ 125°C | Other | FP1107R1-R51-R |
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CRG0805-R-1R07FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.07R,±1% | Other | CRG0805-R-1R07FT |
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HPCR0402-R-1R47FT
Venkel
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1 | High Power CR,0402,1/8W,1.47R,±1% | Resistor Chip | HPCR0402-R-1R47FT |
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R1RW0416DSB-2LR#D1
Renesas Electronics
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1 | The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare | Small Outline Packages | R1RW0416DSB-2LR#D1 |
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CRG0805-R-1R02FT
Venkel
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1 | RoHS 6/6 Green CR,0805,1/8W,1.02R,±1% | Other | CRG0805-R-1R02FT |
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6A10 R0
Taiwan Semiconductor
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0 | Taiwan Semi 6A10 R0 Diode, 100V 6A, 2-Pin R 6 | Diodes, Axial Diameter Horizontal Mounting | 6A10 R0 |
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6A05G R0
Taiwan Semiconductor
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1 | Taiwan Semi 6A05G R0 Diode, 50V 6A, 2-Pin R 6 | Diodes, Axial Diameter Horizontal Mounting | 6A05G R0 |
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ISL88012IH531Z-TK
Renesas Electronics
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1 | Supervisory Circuits DL VMON W//MR /RST R STVTH1=309VVTH2=06V5 | SOT23 (5-Pin) | ISL88012IH531Z-TK |
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TLV3011BIDBVR
Texas Instruments
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1 | Analog Comparators Micropower comparato r with integrated re | SOT23 (6-Pin) | TLV3011BIDBVR |
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