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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Shielded construction• Frequency range below 1.0 MHz• Lowest DCR/μH, in this package size• Powdered iron composition provides softsaturation• Handles high transient current spikes withoutsaturation• Saturation and inductance extremely stable overtemperature• Ultra low buzz noise, due to composite construction• IHLP design; PATENT(S): www.vishay.com/patents• Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912 Inductors Precision Moulded IHLP2525EZER1R0M01 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.8R,±1% Other CRG0805-R-1R80FT 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.91R,±1% Resistor Chip HPCR0402-R-1R91FT 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.1R,±5% Resistor Chip HPCR0402-R-1R1JT 1 Download Model
Part Image Part Image 1 Inductor Power Molded Wirewound 1uH 20% 7.5A 0.0185Ohm DCR 2220 T/R Other ASPI-0520LR-1R0M-T2 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.8R,±5% Other CRG0805-R-1R8JT 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.62R,±1% Other CRG0805-R-1R62FT 1 Download Model
Part Image Part Image 1 1.5 µH Shielded Molded Inductor 10 A 12mOhm Max Nonstandard Other ASPI-0630LR-1R5M-T15 1 Download Model
Part Image Part Image 1 MEMS Crystal Oscillator 22.5792MHz ±50ppm 4-Pin SMD T/R Inductors Precision Moulded ASPI-8030LR-1R0M-T 1 Download Model
Part Image Part Image 1 IHLP® Automotive Inductors, High Temperature (180 °C) Series Inductors Precision Moulded IHLP2020CZER1R0M8A 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.18R,±1% Other CRG0805-R-1R18FT 1 Download Model
Part Image Part Image 1 Inductor Power Shielded Wirewound 1.5uH 20% 100KHz Powdered Iron 9A 0.015Ohm DCR 2525 Automotive T/R Inductors Precision Moulded IHLP2525CZER1R5MA1 1 Download Model
Part Image Part Image 1 Fixed Inductors 1uH 20% Inductors Precision Moulded IHLP4040DZER1R0M51 1 Download Model
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R1RP0416DSB-2PI#D1 Renesas Electronics
1 The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Small Outline Packages R1RP0416DSB-2PI#D1 1 Download Model
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R1RP0416DSB-2LR#S1 Renesas Electronics
0 The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Small Outline Packages R1RP0416DSB-2LR#S1 1 Download Model
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R1RP0416DGE-2PR#B1 Renesas Electronics
0 The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII. Other R1RP0416DGE-2PR#B1 1 Download Model
Part Image Part Image 1 510 nH Unshielded Drum Core, Wirewound Inductor 55 A 0.29mOhm Nonstandard, -40°C ~ 125°C Other FP1107R1-R51-R 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.07R,±1% Other CRG0805-R-1R07FT 1 Download Model
Part Image Part Image 1 High Power CR,0402,1/8W,1.47R,±1% Resistor Chip HPCR0402-R-1R47FT 1 Download Model
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R1RW0416DSB-2LR#D1 Renesas Electronics
1 The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare Small Outline Packages R1RW0416DSB-2LR#D1 1 Download Model
Part Image Part Image 1 RoHS 6/6 Green CR,0805,1/8W,1.02R,±1% Other CRG0805-R-1R02FT 1 Download Model
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6A10 R0 Taiwan Semiconductor
0 Taiwan Semi 6A10 R0 Diode, 100V 6A, 2-Pin R 6 Diodes, Axial Diameter Horizontal Mounting 6A10 R0 1 Download Model
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6A05G R0 Taiwan Semiconductor
1 Taiwan Semi 6A05G R0 Diode, 50V 6A, 2-Pin R 6 Diodes, Axial Diameter Horizontal Mounting 6A05G R0 1 Download Model
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ISL88012IH531Z-TK Renesas Electronics
1 Supervisory Circuits DL VMON W//MR /RST R STVTH1=309VVTH2=06V5 SOT23 (5-Pin) ISL88012IH531Z-TK 1 Download Model
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TLV3011BIDBVR Texas Instruments
1 Analog Comparators Micropower comparato r with integrated re SOT23 (6-Pin) TLV3011BIDBVR 1 Download Model
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