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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	71V65603S150BGG8 Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65603S150BGG8	3D model available Symbol and footprint available 3	1 Download Model
	7133LA25JGI8 Renesas Electronics	1	The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available.	Plastic Leaded Chip Carrier	7133LA25JGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V67602S133PFGI8 Renesas Electronics	1	The 71V67602 3.3V CMOS SRAM is organized as 256K x 36. The 71V676 SRAM contains write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V67602S133PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V416L12BEG Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	BGA	71V416L12BEG	3D model available Symbol and footprint available 3	1 Download Model

	70V3379S4BF8 Renesas Electronics	1	The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3379S4BF8	3D model available Symbol and footprint available 3	1 Download Model
	71V632S7PFG Renesas Electronics	1	The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V632S7PFG	3D model available Symbol and footprint available 3	1 Download Model
	70T3339S133BF Renesas Electronics	1	The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3339S133BF	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A1818DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1818DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	709349L7PFGI8 Renesas Electronics	1	The 709349 is a high-speed 4K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	709349L7PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	7143SA20G Renesas Electronics	1	The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7143SA20G	3D model available Symbol and footprint available 3	1 Download Model
	70V7339S166BF8 Renesas Electronics	1	The 70V7339 is a high-speed 512K x 18 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 8K x 18 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 8K x 18 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7339S166BF8	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3618DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS3A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	7130LA100PDG Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Dual-In-Line Packages	7130LA100PDG	3D model available Symbol and footprint available 3	1 Download Model
	71V67603S133PFG8 Renesas Electronics	1	The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.The order of these three addresses are defined by the internal burst counter and the LBO input pin.	Quad Flat Packages	71V67603S133PFG8	3D model available Symbol and footprint available 3	1 Download Model
	70T3399S166BF Renesas Electronics	1	The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3399S166BF	3D model available Symbol and footprint available 3	1 Download Model

	71V2546S150BG8 Renesas Electronics	1	The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V2546S150BG8	3D model available Symbol and footprint available 3	1 Download Model
	71V416S15YG8 Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V416S15YG8	3D model available Symbol and footprint available 3	1 Download Model
	23K640-I/ST Microchip	1	Microchip Technology SRAM, 23K640-I/ST- 64kbit	Small Outline Packages	23K640-I/ST	3D model available Symbol and footprint available 3	1 Download Model
	AS6C4008-55SIN Alliance Memory	1	SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM	Small Outline Packages	AS6C4008-55SIN	3D model available Symbol and footprint available 3	1 Download Model
	AS6C3216A-55TIN Alliance Memory	1	SRAM 32M, 3V, 55ns 2048K x 16 Asyn SRAM	Small Outline Packages	AS6C3216A-55TIN	3D model available Symbol and footprint available 3	1 Download Model
	CY14E256LA-SZ45XI Infineon	1	256-Kbit (32 K × 8) Non-volatile SRAM	Small Outline Packages	CY14E256LA-SZ45XI	3D model available Symbol and footprint available 3	1 Download Model
	N25S830HAT22IT onsemi	1	• Power Supply Range: 2.7 to 3.6 V• Very Low Standby Current: Typical Isb as low as 1 A• Very Low Operating Current: As low as 3 mA• Simple Memory Control:Single chip select (CS)Serial input (SI) and serial output (SO)• Flexible Operating Modes:Word read and writePage mode (32 word page)Burst mode (full array)• Organization: 32 K x 8 bit• Self Timed Write Cycles• Built−in Write Protection (CS High)• HOLD Pin for Pausing Communication• High Reliability: Unlimited write cycles• G	Small Outline Packages	N25S830HAT22IT	3D model available Symbol and footprint available 3	1 Download Model
	AS6C62256A-70PIN Alliance Memory	1	SRAM 256K, 4.5-5.5V, 70ns 32K x 8 Asynch SRAM	Dual-In-Line Packages	AS6C62256A-70PIN	3D model available Symbol and footprint available 3	1 Download Model
	CY7C1049GN30-10VXIT Infineon	1	SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ , 2.2V ~ 3.6V , -40°C ~ 85°C	Other	CY7C1049GN30-10VXIT	3D model available Symbol and footprint available 3	1 Download Model
	M68AF127BL70MC1U STMicroelectronics	1	RAM Miscellaneous 1M (128Kx8) 70ns	Small Outline Packages	M68AF127BL70MC1U	3D model available Symbol and footprint available 3	1 Download Model
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