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Image Part Number D.S Description Package Category Prices / Stock Model Action
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R1QEA4436RBG-19IB0 Renesas Electronics
1 The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee BGA R1QEA4436RBG-19IB0 1 Download Model
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71V67903S75PFGI Renesas Electronics
1 The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. Quad Flat Packages 71V67903S75PFGI 1 Download Model
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7008L35G Renesas Electronics
1 The 7008 is a high-speed 64K x 8 Dual-Port Static RAM designed to be used as a stand-alone 512K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Other 7008L35G 1 Download Model
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R1LV1616HSA-5SI#B1 Renesas Electronics
1 The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit / 2-Mword × 8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Small Outline Packages R1LV1616HSA-5SI#B1 1 Download Model
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71V3577S85BQ8 Renesas Electronics
1 The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM. BGA 71V3577S85BQ8 1 Download Model
Part Image Part Image 1 400-mil 32-pin plastic TSOP II reverse (TTP-32DR) Small Outline Packages HM628512CLRR-7 1 Download Model
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AS6C2008A-55SIN Alliance Memory
1 SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM Small Outline Packages AS6C2008A-55SIN 1 Download Model
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IS61LV256AL-10TLI Integrated Silicon Solution Inc.
1 SRAM 256K 32Kx8 10ns Async SRAM 3.3v Other IS61LV256AL-10TLI 1 Download Model
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IS61LPS409618B-250TQLI Integrated Silicon Solution Inc.
1 72 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM Quad Flat Packages IS61LPS409618B-250TQLI 1 Download Model
Part Image Part Image 1 NVRAM 8Mb 3V 45ns 1024K x 8 nvSRAM Small Outline Packages CY14B108L-ZS45XI 1 Download Model
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IDT71V65803S133BQI Renesas Electronics
1 IDT SRAM Memory, IDT71V65803S133BQI BGA IDT71V65803S133BQI 1 Download Model
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IDT71024S12TYG8 Renesas Electronics
1 SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 12ns 32-SOJ Other IDT71024S12TYG8 1 Download Model
Part Image Part Image 1 Memory module, SRam 1Mx16-SOP, 16Mbit, 256Kx16 organized SOP 54 +3.3v 12mA -55°C to +125°C Other 3DSR16M16VS4502-IB-A12 1 Download Model
Part Image Part Image 1 SRAM - Asynchronous Memory IC 2Mbit Parallel 45 ns 48-VFBGA (6x8) ,2.2V ~ 3.6V ,-40°C ~ 85°C ,48-VFBGA BGA CY62136EV30LL-45BVXI 1 Download Model
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GS816136DD-250I GSI TECHNOLOGY
1 SRAM 2.5 or 3.3V 512K x 36 18M BGA GS816136DD-250I 1 Download Model
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IS61WV25632BLL-10BLI Integrated Silicon Solution Inc.
1 SRAM 8Mb 256Kx32 10ns Async SRAM BGA IS61WV25632BLL-10BLI 1 Download Model
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IS66WVS2M8BLL-104NLI Integrated Silicon Solution Inc.
1 SRAM 16Mb, SerialRAM, 27V-36V, 104MHz, 8 pin SOIC 150 mil, RoHS Small Outline Packages IS66WVS2M8BLL-104NLI 1 Download Model
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AS7C34098A-15TCN Alliance Memory
1 SRAM SRAM, 4Mb, 256K x 16, 3.3V, 44pin TSOP II, 10ns, Commercial Temp - Tray Small Outline Packages AS7C34098A-15TCN 1 Download Model
Part Image Part Image 1 SRAM Chip Sync Single 1.3V 144M-bit 8M x 18 361-Pin FCBGA Tray BGA CY7C4122KV13-933FCXI 1 Download Model
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AS6C4008-55TIN Alliance Memory
1 Alliance Memory AS6C4008-55TIN SRAM Memory, 4Mbit, 2.7 → 5.5 V, 55ns 32-Pin TSOP Small Outline Packages AS6C4008-55TIN 1 Download Model
Part Image Part Image 1 SRAM 4Mb 3V 45ns 512K x 8 LP SRAM Small Outline Packages CY62148EV30LL-45ZSXIT 1 Download Model
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AS6C4016-55ZIN Alliance Memory
1 SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM Small Outline Packages AS6C4016-55ZIN 1 Download Model
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R1RP0416DSB-2PI#S0 Renesas Electronics
1 Asynchonous Fast SRAM Small Outline Packages R1RP0416DSB-2PI#S0 1 Download Model
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IS61LPS12836A-200TQLI Integrated Silicon Solution Inc.
1 SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 100-LQFP (14x20) Quad Flat Packages IS61LPS12836A-200TQLI 1 Download Model
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IS61WV25616FBLL-10TLI Integrated Silicon Solution Inc.
1 SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS Small Outline Packages IS61WV25616FBLL-10TLI 1 Download Model
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