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71V3559S80PFGI
Renesas Electronics
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1 | The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). | Quad Flat Packages | 71V3559S80PFGI |
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71V416S12YG
Renesas Electronics
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1 | The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V416S12YG |
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71V2556SA133BGI
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA133BGI |
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71V2556SA133BG
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA133BG |
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M48Z02-150PC1
STMicroelectronics
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1 | STMicroelectronics SRAM, M48Z02-150PC1- 16kbit | Dual-In-Line Packages | M48Z02-150PC1 |
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71256L20YGI
Renesas Electronics
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1 | The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available. | Other | 71256L20YGI |
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70T633S12BFI8
Renesas Electronics
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1 | The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T633S12BFI8 |
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71V35761SA200BQG8
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA200BQG8 |
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71V35761SA166BGGI
Renesas Electronics
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1 | The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V35761SA166BGGI |
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71V3558SA166BQGI8
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA166BQGI8 |
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70V35L20PFGI8
Renesas Electronics
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1 | The 70V35 is a high-speed 8K x 18 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V35L20PFGI8 |
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70T3519S200BC
Renesas Electronics
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1 | The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3519S200BC |
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7143LA70GB
Renesas Electronics
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1 | The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7143LA70GB |
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71024S20YGI8
Renesas Electronics
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1 | The 71024 5V CMOS SRAM is organized as 128K x 8. All bidirectional inputs and outputs of the 71024 are TTL-compatible, and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71024S20YGI8 |
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5962-8687512XA
Renesas Electronics
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1 | The 5962-86875 (IDT 7130/40) is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with | Ceramic Dual-In-Line Packages | 5962-8687512XA |
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71V416L12BE8
Renesas Electronics
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1 | The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | BGA | 71V416L12BE8 |
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70T3589S133BCI8
Renesas Electronics
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1 | The 70T3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3589S133BCI8 |
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7025L70GB
Renesas Electronics
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1 | The 7025 is a high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Other | 7025L70GB |
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70V05L15PFG
Renesas Electronics
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1 | The 70V05 is a high-speed 8K x 8 Dual-Port Static RAM designed to be used as a stand-alone 64K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. | Quad Flat Packages | 70V05L15PFG |
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70T651S15BF
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S15BF |
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5962-3829413MZA
Renesas Electronics
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1 | The 5962-38294 (7164 SRAM) is organized as 8K x 8 and offers a reduced power standby mode. The low-power version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. | Ceramic Dual-In-Line Packages | 5962-3829413MZA |
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RMQC4A1818DGBA-302#AC0
Renesas Electronics
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1 | The RMQC4A1836DGBA is a 524, 288-word by 36-bit and the RMQC4A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQC4A1818DGBA-302#AC0 |
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71V546S100PFGI8
Renesas Electronics
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1 | The 71V546 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turn-around. The 71V546 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM. | Quad Flat Packages | 71V546S100PFGI8 |
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71V3556S100PFG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | Quad Flat Packages | 71V3556S100PFG8 |
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71V416L10BEG8
Renesas Electronics
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1 | The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | BGA | 71V416L10BEG8 |
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