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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	71V424L15YGI Renesas Electronics	1	The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V424L15YGI	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S150BQ Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65603S150BQ	3D model available Symbol and footprint available 3	1 Download Model
	70V3589S133DRG8 Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	Quad Flat Packages	70V3589S133DRG8	3D model available Symbol and footprint available 3	1 Download Model
	70V24L15PFG Renesas Electronics	1	The 70V24 is a high-speed 4K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V24L15PFG	3D model available Symbol and footprint available 3	1 Download Model

	71V321L35JG8 Renesas Electronics	1	The 71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor communications. The device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	71V321L35JG8	3D model not available Symbol and footprint available 2	1 Download Model
	71256L100TDB Renesas Electronics	1	The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	71256L100TDB	3D model not available Symbol and footprint available 2	1 Download Model
	71256L25DB Renesas Electronics	1	The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.	Ceramic Dual-In-Line Packages	71256L25DB	3D model not available Symbol and footprint available 2	1 Download Model
	70V631S15BC Renesas Electronics	1	The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po	BGA	70V631S15BC	3D model available Symbol and footprint available 3	1 Download Model
	70T3599S166BF Renesas Electronics	1	The 70T3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3599S166BF	3D model available Symbol and footprint available 3	1 Download Model
	70T633S10BFI8 Renesas Electronics	1	The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T633S10BFI8	3D model available Symbol and footprint available 3	1 Download Model
	5962-8700213ZA Renesas Electronics	1	The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with M	Ceramic Dual-In-Line Packages	5962-8700213ZA	3D model not available Symbol and footprint available 2	1 Download Model
	R1Q2A4418RBG-40IB0 Renesas Electronics	1	The R1Q2A4436RBG is a 4, 194, 304-word by 36-bit and the R1Q2A4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed,	BGA	R1Q2A4418RBG-40IB0	3D model available Symbol and footprint available 3	1 Download Model
	71T75802S150PFG Renesas Electronics	1	The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.	Quad Flat Packages	71T75802S150PFG	3D model available Symbol and footprint available 3	1 Download Model
	7143SA55GB Renesas Electronics	1	The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7143SA55GB	3D model available Symbol and footprint available 3	1 Download Model
	7006L55G Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7006L55G	3D model available Symbol and footprint available 3	1 Download Model

	70T3399S200BC8 Renesas Electronics	1	The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.	BGA	70T3399S200BC8	3D model available Symbol and footprint available 3	1 Download Model
	71V416L15BEI Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	BGA	71V416L15BEI	3D model available Symbol and footprint available 3	1 Download Model
	70V261L25PFGI8 Renesas Electronics	1	The 70V261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	70V261L25PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	70V06L20JGI8 Renesas Electronics	1	The 70V06 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port SRAM or as a combination MASTER/SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode.	Plastic Leaded Chip Carrier	70V06L20JGI8	3D model not available Symbol and footprint available 2	1 Download Model
	70V3569S5BCI8 Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S5BCI8	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQG Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQG	3D model available Symbol and footprint available 3	1 Download Model
	R1LP0408DSB-5SI#B0 Renesas Electronics	1	The R1LP0408D Series is a family of 4-Mbit static RAMs organized 512-kword × 8-bit, fabricated by Renesas’s high-performance CMOS and TFT technologies. The R1LP0408D Series has realized higher density, higher performance and low power consumption. The R1LP0408D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP and 32-pin TSOP.	Small Outline Packages	R1LP0408DSB-5SI#B0	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S75BG Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S75BG	3D model available Symbol and footprint available 3	1 Download Model
	7025L20PFGI8 Renesas Electronics	1	The 7025 is a high-speed 8K x 16 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. An automatic power down feature controlled by Chip Enable (CE) permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Quad Flat Packages	7025L20PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	7130SA55CB Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Ceramic Dual-In-Line Packages	7130SA55CB	3D model not available Symbol and footprint available 2	1 Download Model
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