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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	70V3569S6BF Renesas Electronics	1	The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3569S6BF	3D model available Symbol and footprint available 3	1 Download Model
	71V416L10YGI Renesas Electronics	1	The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V416L10YGI	3D model available Symbol and footprint available 3	1 Download Model
	7133SA70G Renesas Electronics	1	The 7133 high-speed 2K x 16 Dual-Port Static RAMs is designed to be used as a stand-alone 16-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7143 "SLAVE" Dual-Port in 32-bit-or-more word width systems. Low-power (LA) versions offer battery backup data retention capability, with each port typically consuming 200μW for a 2V battery. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7133SA70G	3D model available Symbol and footprint available 3	1 Download Model
	5962-8700203ZA Renesas Electronics	1	The 5962-87002 (IDT 7132/42) is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with a "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with M	Ceramic Dual-In-Line Packages	5962-8700203ZA	3D model not available Symbol and footprint available 2	1 Download Model

	R1QAA4418RBG-19IB0 Renesas Electronics	1	The R1QAA4436RBG is a 4, 194, 304-word by 36-bit and the R1QAA4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed,	BGA	R1QAA4418RBG-19IB0	3D model available Symbol and footprint available 3	1 Download Model
	71V67703S80BQGI Renesas Electronics	1	The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V67703S80BQGI	3D model available Symbol and footprint available 3	1 Download Model
	M48T35Y-70MH1F STMicroelectronics	1	5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER® SRAM	Small Outline Packages	M48T35Y-70MH1F	3D model available Symbol and footprint available 3	1 Download Model
	70T659S15BF8 Renesas Electronics	1	The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T659S15BF8	3D model available Symbol and footprint available 3	1 Download Model
	7130LA25TFGI Renesas Electronics	1	The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535	Quad Flat Packages	7130LA25TFGI	3D model available Symbol and footprint available 3	1 Download Model
	71V65603S133BG Renesas Electronics	1	The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65603S133BG	3D model available Symbol and footprint available 3	1 Download Model
	71V65803S133BGG8 Renesas Electronics	1	The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V65803S133BGG8	3D model available Symbol and footprint available 3	1 Download Model
	70V3589S166BC Renesas Electronics	1	The 70V3589 is a high-speed 64K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3589 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V.	BGA	70V3589S166BC	3D model available Symbol and footprint available 3	1 Download Model
	70V7519S166BF Renesas Electronics	1	The 70V7519 is a high-speed 256K x 36 (9Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 4Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 4Kx36 memory block not already accessed by the other port. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70V7519S166BF	3D model available Symbol and footprint available 3	1 Download Model
	7006S20G Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7006S20G	3D model available Symbol and footprint available 3	1 Download Model
	71V30S55TFG Renesas Electronics	1	The 71V30 high-speed 1K x 8 Dual-Port Static RAM is designed to be used as a stand-alone 8-bit Dual-Port SRAM. It has two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode.	Quad Flat Packages	71V30S55TFG	3D model available Symbol and footprint available 3	1 Download Model

	70T651S10BFI8 Renesas Electronics	1	The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.	BGA	70T651S10BFI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3557S85BGI Renesas Electronics	1	The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).	BGA	71V3557S85BGI	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#D0 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#D0	3D model available Symbol and footprint available 3	1 Download Model
	70V658S12BCI Renesas Electronics	1	The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por	BGA	70V658S12BCI	3D model available Symbol and footprint available 3	1 Download Model
	7143SA35G Renesas Electronics	1	The 7143 is a high-speed 2K x 16 Dual-Port Static RAMs. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 32-bit-or-wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Military grade product in compliance with MIL-PRF-38535 QML is available.	Other	7143SA35G	3D model available Symbol and footprint available 3	1 Download Model
	71T75902S85BG Renesas Electronics	1	The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.	BGA	71T75902S85BG	3D model available Symbol and footprint available 3	1 Download Model
	7006L20PFGI8 Renesas Electronics	1	The 7006 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available.	Quad Flat Packages	7006L20PFGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V3577S80BQ8 Renesas Electronics	1	The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.	BGA	71V3577S80BQ8	3D model available Symbol and footprint available 3	1 Download Model
	71V016SA20YG8 Renesas Electronics	1	The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.	Other	71V016SA20YG8	3D model available Symbol and footprint available 3	1 Download Model
	71V2556S100PFGI Renesas Electronics	1	The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM.	Quad Flat Packages	71V2556S100PFGI	3D model available Symbol and footprint available 3	1 Download Model
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