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GP PSLR31.14-TLTM-P1P2-1-150-R18
ams OSRAM
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1 | High Power LEDs - Single Color DURIS S 5 HORTICULTR 325 - 380 FLUX | Other | GP PSLR31.14-TLTM-P1P2-1-150-R18 |
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KT DDLM31.13-6H7J-36-W4A4-140-R18
ams OSRAM
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1 | High Power LEDs - Single Colour True Green SYNIOS S 2222 | Other | KT DDLM31.13-6H7J-36-W4A4-140-R18 |
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2214934-3
TE Connectivity
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1 | MULTI-BEAM CE 2X2 P + 2X4 S VERTICAL - Boxed Product (Development Kits) | Other | 2214934-3 |
3
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GW P9LR34.EM-M1M6-XX55-1-45-R18
ams OSRAM
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1 | High Power LEDs - White Duris S 8 24V 4000K 180 - 240lm | Other | GW P9LR34.EM-M1M6-XX55-1-45-R18 |
3
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X28HC64SZ-70
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Small Outline Packages | X28HC64SZ-70 |
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R5F212A8SNFA#V2
Renesas Electronics
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1 | The R8C/2A Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C CPU core, and are packaged in a 20-pin molded-plastic LSSOP. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Furthermore, the R8C/29 Group has on-chip dat | Quad Flat Packages | R5F212A8SNFA#V2 |
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R5F212AASDFA#V2
Renesas Electronics
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1 | The R8C/2A Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C CPU core, and are packaged in a 20-pin molded-plastic LSSOP. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Furthermore, the R8C/29 Group has on-chip dat | Quad Flat Packages | R5F212AASDFA#V2 |
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R5F21292SNSP#W4
Renesas Electronics
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1 | The R8C/29 Group is supported only for customers who have already adopted these products. The RL78/G14 Group is recommended for new designs.These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C CPU core, and are packaged in a 20-pin molded-plastic LSSOP. It implements sophisticated instructions for a high level of instruction efficiency. With 1Mb of address space, they are capable of executing instructions at high speed. Furthermore, the R8C/29 Group has on-chip dat | Small Outline Packages | R5F21292SNSP#W4 |
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09651896782741
HARTING
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1 | D-SUB S 09P STR MA THR UNC PL2 GP RE | Other | 09651896782741 |
3
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2214913-7
TE Connectivity
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1 | MBCE 2X2 P + 2X6 S VERTICAL EON | Other | 2214913-7 |
3
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09662756581741
HARTING
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1 | D-SUB S 15P STR FE THR M3 PL2 GP RE | Other | 09662756581741 |
3
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EEE1EA3R3NR
Panasonic
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1 | PANASONIC - EEE1EA3R3NR - SMD Aluminium Electrolytic Capacitor, Bi-Polar, Radial Can - SMD, 3.3 µF, 25 V, S Series | Other | EEE1EA3R3NR |
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LT1721CGN#PBF
Analog Devices
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1 | Analog Comparators 4x, 4.5ns, 1x S 3V/5V Comps w/ R2R Outs | Small Outline Packages | LT1721CGN#PBF |
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LT1816IMS8#PBF
Analog Devices
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1 | High Speed Operational Amplifiers 2x 220MHz, 1500V/ s Op Amps w/ Progmabl | Small Outline Packages | LT1816IMS8#PBF |
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LT1365CN#PBF
Analog Devices
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1 | High Speed Operational Amplifiers 2x & 4x 70MHz, 1000V/ s Op Amps | Dual-In-Line Packages | LT1365CN#PBF |
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RWR80S39R2FRB12
Vishay
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1 | Wirewound Resistors, Military/Established Reliability, MIL-PRF-39007 Qualified, Type RWR, Up to S Level, Axial Lead | Resistors, Axial Diameter Horizontal Mounting | RWR80S39R2FRB12 |
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VOR1121A6
Vishay
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1 | Solid State Relays - PCB Mount Hi-Reliability SSR 5300 Vrms 370mA S Ch | Dual-In-Line Packages | VOR1121A6 |
3
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LT1814CS
Analog Devices
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1 | High Speed Operational Amplifiers LT1814 - Quad 3mA, 100MHz, 750V/- s Operational Amplifier | Small Outline Packages | LT1814CS |
3
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TCAN1051GDRBQ1
Texas Instruments
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1 | s SAE J2962-2 and IEC 62228-3 (up to 500 kbps) without common mode | Small Outline No-lead | TCAN1051GDRBQ1 |
3
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APL3202
Anpec Elec
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1 | The APL3202 is a constant-current/constant-voltage linear charger for single cell Li+ batteries. TheAPL3202 needs no external MOSFET s or diodes, ... | SOT23 (5-Pin) | APL3202 |
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EEE1HAR47SR
Panasonic
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1 | PANASONIC - EEE1HAR47SR - SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 0.47 µF, 50 V, S Series, 2000 hours @ 85°C | Capacitor Al Electrolytic | EEE1HAR47SR |
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FPS 4-T220 0R500 S 1% Q
POWERTRON
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1 | POWERTRON - FPS 4-T220 0R500 S 1% Q - SMD Current Sense Resistor, Screw, 0.5 ohm, FPS 4-T220, TO-263 (D2PAK), 15 W, ± 1%, Metal Foil | Other | FPS 4-T220 0R500 S 1% Q |
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1 | TCXO Oscillators 39.000 MHz MultiVolt TCXO Clipped Sine Wave 1.7 - 3.6 +/-1.5 ppm -40 - +85C 2.0 x 1.6 mm 4 Pad S | Other | ECS-TXO-20CSMV4-390-CN-TR |
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EEE0JA220NR
Panasonic
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1 | PANASONIC - EEE0JA220NR - SMD Aluminium Electrolytic Capacitor, Bi-Polar, Radial Can - SMD, 22 µF, 6.3 V, S Series | Other | EEE0JA220NR |
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EEE-1VA331UAP
Panasonic
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1 | SMD Aluminium Electrolytic Capacitor, Radial Can - SMD, 330 µF, 35 V, S Series, 1000 hours @ 85°C | Other | EEE-1VA331UAP |
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