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M10162040054X0ISAR
Renesas Electronics
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1 | The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline Packages | M10162040054X0ISAR |
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M10082040108X0IWAY
Renesas Electronics
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1 | The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package. | Small Outline No-lead | M10082040108X0IWAY |
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BR24S256F-WE2
ROHM Semiconductor
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1 | EEPROM,I2C, 256K, 32768 x 8, Wcell, SOP8 | Small Outline Packages | BR24S256F-WE2 |
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DS28E01P-100+
Analog Devices
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1 | EEPROM DS28E01P-100+ | Other | DS28E01P-100+ |
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M24C08-FMH6TG
STMicroelectronics
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1 | EEPROM MEMORY | Other | M24C08-FMH6TG |
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M24M02-DRCS6TP/K
STMicroelectronics
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1 | EEPROM 2MBit Serial I2C SOIC8 | Other | M24M02-DRCS6TP/K |
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M24C32-FMH6TG
STMicroelectronics
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1 | EEPROM MEMORY | Other | M24C32-FMH6TG |
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AT28HC64B-70JU
Microchip
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1 | Microchip Technology AT28HC64B-70JU, 64kbit Parallel EEPROM Memory, 70ns 32-Pin PLCC Parallel | Plastic Leaded Chip Carrier | AT28HC64B-70JU |
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AT28BV64B-20TU-T
Microchip
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1 | EEPROM 200NS, TSOP, IND TEMP, GREEN | Small Outline Packages | AT28BV64B-20TU-T |
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DS28E05R+T
Analog Devices
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1 | EEPROM 1-Wire 112-BYTE EEPROM | SOT23 (3-Pin) | DS28E05R+T |
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W27C512-45Z
Winbond
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1 | EEPROM Memory IC 512Kb (64K x 8) Parallel 45ns 28-PDIP | Dual-In-Line Packages | W27C512-45Z |
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DS24B33+
Analog Devices
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1 | Maxim DS24B33+, 4kB EEPROM Memory, 10μs 3-Pin TO-92 Serial-1 Wire | Other | DS24B33+ |
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M24C16-FMH6TG
STMicroelectronics
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1 | EEPROM MEMORY | Other | M24C16-FMH6TG |
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AT24C64D-SSHM-B
Microchip
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1 | Atmel AT24C64D-SSHM-B EEPROM Memory, 64kbit, 550ns, 1.7 → 5.5 V 8-Pin SOIC | Small Outline Packages | AT24C64D-SSHM-B |
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AT25010B-SSHL-T
Microchip
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1 | EEPROM 1K (128 X 8) SPI, 1.8V | Small Outline Packages | AT25010B-SSHL-T |
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M27C512-12F1
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Other | M27C512-12F1 |
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M27C512-15F1
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Ceramic Dual-In-Line Packages | M27C512-15F1 |
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M27C512-15F6
STMicroelectronics
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1 | UV EPROM and OTP EPROM | Other | M27C512-15F6 |
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DS2505P+
Analog Devices
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1 | Maxim DS2505P+ EEPROM Memory, 16kbit, 120μs, 2.8 → 6.0 V 6-Pin TSOC | Other | DS2505P+ |
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HS1-6664RH-8
Renesas Electronics
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1 | The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus contr | Ceramic Dual-In-Line Packages | HS1-6664RH-8 |
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HM1-6617/883
Renesas Electronics
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1 | The HM-6617/883 is a 16, 384-bit fuse link CMOS PROM in a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0. 600 inch wide 24 pin SBDIP, the 0. 300 inch wide slim SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617/883 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable control which makes this device ideal for applications utilizing recent generation microprocessors. This design technique, combined wi | Ceramic Dual-In-Line Packages | HM1-6617/883 |
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HS1-6664RH-T
Renesas Electronics
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1 | The Intersil Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process and utilizes synchronous circui | Ceramic Dual-In-Line Packages | HS1-6664RH-T |
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AT27C256R-70PU
Microchip
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1 | MICROCHIP - AT27C256R-70PU - EPROM, One Time Programmable, 70 ns, 32K x 8bit, 256 Kbit, 4.5 V to 5.5 V, DIP-28 | Dual-In-Line Packages | AT27C256R-70PU |
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AT27C020-55PU
Microchip
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1 | AT27C020-55PU, OTP EPROM Memory 2Mbit 256K x 8 bit 55ns 4.5 → 5.5 V 32-Pin PDIP | Dual-In-Line Packages | AT27C020-55PU |
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AT27C1024-45JU
Microchip
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1 | AT27C1024-45JU, EPROM Memory Chip 1Mbit 64K x 16 bit 45ns 4.5 → 5.5 V 44-Pin PLCC | Plastic Leaded Chip Carrier | AT27C1024-45JU |
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![Part Image](["https://componentsearchengine.com/2D/0T/12650721.3.1.png",null,null])
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