DF08- Model Download Search Results
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FGH60N60SMD-F085
onsemi
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1 | IGBT, 600V, 60A, 1.8V, TO-247Field Stop | Other | FGH60N60SMD-F085 |
3
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AT25DF081A-MH-T
Renesas Electronics
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1 | The AT25DF081A is a member of our Standard class code and data storage solutions designed for 3 Volt systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three Security Register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. | Small Outline No-lead | AT25DF081A-MH-T |
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DF08SA-E3/77
Vishay
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1 | Bridge Rectifier Diode 1A 800V DFS | Small Outline Packages | DF08SA-E3/77 |
3
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AT25DF081A-SSH-T
Adesto Technologies
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1 | Flash Memory 8M, 2.7-3.6V, 100Mhz Serial Flash, JEDEC SOIC - PACKAGE 8S1 | Small Outline Packages | AT25DF081A-SSH-T |
3
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ADF08SA04
TE Connectivity
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1 | DIP Switch, Gold Flash Contact Plating, Black, Polyphenylene Sulfide (PPS), 8 Switch, -30 – 85 °C [-22 – 185 °F], ALCOSWITCH ADF | Other | ADF08SA04 |
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FGY160T65SPD-F085
onsemi
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1 | Automotive Qualified; High input impedance; Short circuit ruggedness > 6 μs @ 25 °C; Copacked with soft, fast recovery Extremefast diode; Maximum junction temperature : TJ = 175 °C; Tight parameter distribution; 100% of the parts are dynamically tested; Positive temperature Co-efficient; Very low saturation voltage : VCE(sat) = 1.6 V (Typ.) @ IC = 160 A | Transistor Outline, Vertical | FGY160T65SPD-F085 |
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DF08M
onsemi
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1 | Glass passivated junction. ; Low leakage.; UL certified, UL #E111753 and E326243.; Surge overload rating: 50 amperes peak. | Dual-In-Line Packages | DF08M |
3
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AT25DF081A-SSH-T
Renesas Electronics
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1 | The AT25DF081A is a member of our Standard class code and data storage solutions designed for 3 Volt systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three Security Register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. | Small Outline Packages | AT25DF081A-SSH-T |
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XC9276DF080R-G
Torex
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1 | Ultra-Low Quiescent Current, Synchronous Step-Down PFM DC/DC Converter with Output voltage selectable function, WLP-6-03 | Other | XC9276DF080R-G |
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PSDF0860S1
PANJIT
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1 | FRED (VRRM=600-1200V,IF=4-60A) - PSDF0860S1 , Speedy, 600V, 830, ITO-220AC | Transistor Outline, Vertical | PSDF0860S1 |
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DF08M/45
Vishay
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1 | Bridge Rectifier Single Phase Standard 800 V Through Hole DFM-55°C ~ 150°C (TJ),1 A | Other | DF08M/45 |
3
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DF08S
Vishay
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1 | DF08S, Bridge Rectifier Single Phase, 1A 800V, 4-Pin DF-S | Small Outline Packages | DF08S |
3
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AT25DF081-SSHN-B
Microchip
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1 | AT25DF081-SSHN-B, Serial-SPI NOR Flash Memory 8Mbit, 7ns, 1.65 → 1.95 V, 8-Pin, SOIC | Small Outline Packages | AT25DF081-SSHN-B |
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AT26DF081A-SSU
Microchip
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1 | 8-megabit 2.7-volt Minimum SPI Serial Flash Memory | Small Outline Packages | AT26DF081A-SSU |
3
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JYAA4222MDF085000B
JB CAPACITORS
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1 | Capacitor: ceramic; Y1; 2.2nF; 400VAC; Y5V; ±20%; 10mm | Other | JYAA4222MDF085000B |
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AT25DF081A-SH-B
Renesas Electronics
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1 | The AT25DF081A is a member of our Standard class code and data storage solutions designed for 3 Volt systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three Security Register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. | Small Outline Packages | AT25DF081A-SH-B |
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AT25DF081A-SH-T
Renesas Electronics
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1 | The AT25DF081A is a member of our Standard class code and data storage solutions designed for 3 Volt systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three Security Register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. | Small Outline Packages | AT25DF081A-SH-T |
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PCDF0865G1
PANJIT
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1 | SiC Schottky (650-1200V) - PCDF0865G1, 650V, 8A, ITO-220AC | Transistor Outline, Vertical | PCDF0865G1 |
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DF08-G
Comchip Technology Corporation Ltd
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1 | Bridge Rectifier Diode, 1A, 800V V(RRM), | DF08-G |
0
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DF08-H
Formosa Microsemi Co Ltd
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1 | Bridge Rectifier Diode, | DF08-H |
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DF08-G
Sensitron Semiconductors
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1 | Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, GREEN, PLASTIC, DIP-4 | DF08-G |
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DF08-LF
Won-Top Electronics Co Ltd
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1 | Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon | DF08-LF |
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DF08-G
Sangdest Microelectronics (Nanjing) Co Ltd
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1 | Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon | DF08-G |
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ADF080550R50.5%100PPM/KKS
Microtech GmbH Electronic
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1 | Fixed Resistor, Metal Glaze/thick Film, 0.125W, 50.5ohm, 150V, 0.5% +/-Tol, 100ppm/Cel, Surface Mount, 0805 | ADF080550R50.5%100PPM/KKS |
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ADF080515R0.5%50PPM/KKP
Microtech GmbH Electronic
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1 | Fixed Resistor, Metal Glaze/thick Film, 0.125W, 15ohm, 150V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount, 0805 | ADF080515R0.5%50PPM/KKP |
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