IPB03 Footprint, Symbol and 3D Model search results

Showing 20 of 45 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB031NE7N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB031NE7N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB031N08N5ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB031N08N5ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB03N03LB Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB03N03LB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB030N08N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 160A I(D), 80V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IPB030N08N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB032N10N5 Infineon Technologies AG	1	Power Field-Effect Transistor, 166A I(D), 100V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263	IPB032N10N5	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB035N08N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 80V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB035N08N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB039N04LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB039N04LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB034N06L3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB034N06L3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB034N03LGXT Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB034N03LGXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB03N03LAG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB03N03LAG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB039N04LG Infineon Technologies AG	1	Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB039N04LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB034N06N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IPB034N06N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB038N12N3G Rochester Electronics LLC	1	120A, 120V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3	IPB038N12N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB036N12N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263	IPB036N12N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB039N10N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA	IPB039N10N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB039N10N3GE8187ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA	IPB039N10N3GE8187ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB030N08N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 160A I(D), 80V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IPB030N08N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB038N12N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB038N12N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB034N06L3G Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB034N06L3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB038N15NM6ATMA1 Infineon This part was updated within the past 30 days. Set alerts for model updates on the part download page.	0	OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package	IPB038N15NM6ATMA1	3D model available Symbol and footprint not available 1	1 Download Model
1 2

Can't find what you're looking for? Request this part

IPB03 Model Download Search Results

Popular Power Field-Effect Transistors